PART |
Description |
Maker |
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
FT250DM-6 FT250DM-8 FT250DM FT250DM-10 FT250DM-12 |
Phase Control SCR 250 Amperes Avg 200-1800 Volts 相位控制晶闸管二五零安培平均200-1800伏特
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
MJ10021 ON1972 MJ10020 |
From old datasheet system 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
1N3087 1N3111SERIES 1N5162SERIES 1N5162 1N3111 1N3 |
150AMP AVG SILICON RECTIFIER DIODES 150AMP AVG的一般整流二极管 150am avg POWER SILICON RECTIFIER DIODES 600V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 200V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 300V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 400V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 500V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 800V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 1000V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 50V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 150AMP AVG SILICON RECTIFIER DIODES
|
International Rectifier, Corp. IRF[International Rectifier]
|
PD400N16 PC400N16 |
400拢? Avg 1600 拢?olts 400 Avg 1600 Volts
|
Nihon Inter Electronics Corporation
|
MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET 2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
STPS10L40CFP STPS10L40CG-TR STPS10L40C 9433 |
LOW DROP POWER SCHOTTKY RECTIFIER From old datasheet system Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ST Microelectronics STMicroelectronics
|
1N4046 1N4049 1N4048 1N4045 1N4056 1N4044 1N4047 1 |
275 Amp Avg Power Silicon Rectifier Diodes 275安培平均电力硅整流二极管 275am Avg POWER SILICON RECTIFIER DIODES 100V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 150V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 200V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 250V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 300V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 400V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 500V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 600V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 700V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 800V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 900V 275A Std. Recovery Diode in a DO-205AB (DO-9)package 1000V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
|
International Rectifier, Corp. IRF[International Rectifier]
|
1N3305 1N3307B 1N3312B 1N3323B 1N3314B 1N3310B 1N3 |
Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 22 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 140 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 10 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极 Zener Voltage Regulator Diode 齐纳稳压二极 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 9.1 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 160 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB SILICON 50 WATT ZENER DIODES Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆) Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
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TE Connectivity, Ltd. Hammond Manufacturing Co., Ltd. STMicroelectronics N.V. B&K Precision, Corp. Microsemi, Corp. MICROSEMI[Microsemi Corporation] MICROSEMI CORP-SCOTTSDALE
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MJW2119305 MJW21194G MJW21193 MJW21194 MJW21193G |
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
|
ONSEMI[ON Semiconductor]
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