PART |
Description |
Maker |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
KSA1220A KSA1220 KSA1220AOS KSA1220AYS KSA1220AYST |
PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier High Frequency Power Amplifier 1.2 A, 160 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305 |
SMD Bipolar Power Transistor NPN General Purpose Amplifier/Switch SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
2SA1899 2SA1899O |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SC-71 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
CJD42CPNP CJD41C CJD41CNPN CJD42C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
2SA1837 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
KSC4010 KSC4010RTU KSC4010OTU KSC4010O |
6 A, 120 V, NPN, Si, POWER TRANSISTOR Audio Power Amplifier NPN Epitaxial Silicon Transistor
|
FAIRCHILD SEMICONDUCTOR CORP
|
2SB1015 2SB1015A EA09109 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|