PART |
Description |
Maker |
ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE 1553 nm, LASER DIODE 1558 nm, LASER DIODE 1544 nm, LASER DIODE InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制 InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制 1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE 785 nm, LASER DIODE 807 nm, LASER DIODE 798 nm, LASER DIODE
|
|
NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
SLD105UL |
Low Power GaAIAs Laser Diode(低功耗镓铝砷激光二极管) GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
DL-3150-101 DL-3150-102 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
DL-4038-021 |
Red Laser Diode High Power AlGaInP Laser Diode
|
SANYO
|
DL-3038-033 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
SLD332F |
805 nm, LASER DIODE 1W High Power Laser Diode
|
Sony Corporation
|