| PART |
Description |
Maker |
| IRF5850 IRF5850TR |
2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
Ultra Low On-Resistance
|
International Rectifier
|
| TPC8020-H |
MOSFET TPC Series
Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII)
|
Toshiba Semiconductor
|
| TPCA8004-H |
MOSFET TPC Series
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
| CPH3307 |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
|
SANYO[Sanyo Semicon Device]
|
| KRF7343 |
HEXFET Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SK1450 |
20 A, 450 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo
|
| 2SK383204 2SK3832 |
30 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| 2SK3980 |
900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| 2SJ596 2SJ596TP-FA |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252VAR
P-Channel Silicon MOSFET DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| STD95NH02L STD95NH02LT4 STD95NH02L-1 |
N-CHANNEL 24V - 0.0039 Ohm - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 24V - 0.0039OHM - 80A DPAK ULTRA LOW GATE CHARGE STRIPFET MOSFET
|
ST Microelectronics
STMicroelectronics
|
| IRLR8726PBF09 IRLR8726TRR IRLR8726TRPBF IRLR8726PB |
HEXFET Power MOSFET
86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra-Low Gate Impedance
|
International Rectifier
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
|
