PART |
Description |
Maker |
IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五(巴西)直| 36A条(丁)|63AB HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A) 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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International Rectifier, Corp. http:// IRF[International Rectifier]
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IRLR3715 IRLU3715 IRLR3715TRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 54A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 20V的五(巴西)直| 54A条(丁)|52AA SMPS MOSFET 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
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International Rectifier, Corp. IRF[International Rectifier]
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STS4DPF20L 8006 |
DUAL P-CHANNEL 20V - 0.07 OHM - 4A SO-8 STRIPFET POWER MOSFET DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET From old datasheet system DUAL P-CHANNEL 20V - 0.07 OHM - 4A SO-8 STRIPFET POWER MOSFET Dual P-CHANNEL POWER MOSFET DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFETPOWER MOSFET 双P沟道20V 0.07欧姆- 4A条的SO - 8 STripFET⑩功率MOSFET
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
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IRF7106 IRF7106TR |
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
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IRF[International Rectifier]
|
IRF7460 IRF7460TR IRF7460TRPBF |
12 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Power MOSFET(Vdss=20V/ Id=12A) Power MOSFET(Vdss=20V, Id=12A) 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
SI2300 |
VDS=20V,RDS(ON)=40m VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m
|
TY Semiconductor Co., Ltd
|
FDC638APZ |
-20V P-Channel 2.5V PowerTrenchSpecified MOSFET P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
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FAIRCHILD[Fairchild Semiconductor]
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FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET 20V N & P-Channel PowerTrench MOSFETs 20V N &P - Channel Power Trench MOSFET
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|
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APEM SA
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HS-22620RH HS-2620RH HS-2622RH |
Op Amp, Dual, Wideband, High Input Impedance Uncompensated, 100MHz, 20V/s, Rad-Hard Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 500MΩ Input Impedance Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 65MΩ Input Impedance
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Intersil
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IRF7401 IRF7402 IRF7401TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)=0.022ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)
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IRF[International Rectifier]
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IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=20V, Rds(on)=0.035ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的(不适用沟道的HEXFET功率马鞍山场效应管) N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
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International Rectifier, Corp.
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