PART |
Description |
Maker |
HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM 262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
CXK582000TM/YM/M-10LL CXK582000TM/YM/M-85LL |
262144-word x 8-bit High Speed CMOS Static RAM 262144字8位高速CMOS静态RAM 262144-word x 8-bit High Speed CMOS Static RAM
|
Vishay Intertechnology, Inc. SONY
|
M5M5V416CWG-85HI |
4194304-bit (262144-word by 16-bit) CMOS static RAM
|
Mitsubishi Electric Corporation
|
M5M5V208RV-12L M5M5V208RV-12LL M5M5V208VP-85L M5M5 |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
M5M5V416WG-70LI M5M5V416BWG M5M5V416BWG-10H M5M5V4 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位(262144字由16位)的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp. http://
|
CXK5B41020TM-12 |
262144-word x 4-bit High Speed Bi-CMOS Static RAM
|
SONY
|
M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
M5M5256DFP-70VLL M5M5256DFP-70VXL M5M5256DFP-85VLL |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 From old datasheet system
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MSM512800C |
262144-Word X 8-Bit DYNAMIC RAM
|
OKI electronic componets
|