PART |
Description |
Maker |
BUZ342 C67078-S3135-A2 |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 60 A, 50 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) SIPMOS功率晶体管(N通道增强模式雪崩级的dv /额定的胸苷超低电阻) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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BUZ111 BUZ111S Q67040-S4003-A2 |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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BUZ102SL-4 |
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 6.2 A, 55 V, 0.033 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SIPMOS ? Power Transistor Quad-Channel SIPMOS Power Transistor
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SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
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BUZ104L C67078-S1358-A2 BUZ104LE3046 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) SIPMOS功率晶体管(N通道增强模式雪崩额定逻辑电平dv /额定的胸苷低电阻 From old datasheet system SIPMOS ? Power Transistor N-Channel SIPMOS Power Transistor
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SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
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BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature) SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
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Infineon Siemens Semiconductor Group SIEMENS AG
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SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GX |
SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated 7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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Infineon Technologies AG
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RF1K49221 FN4314 |
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETPower MOSFET 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET From old datasheet system 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET?Power MOSFET 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET 2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET
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INTERSIL[Intersil Corporation]
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RFP8P06LE RFD8P06LESM RFD8P06LE FN4273 |
8A/ 60V/ 0.300 Ohm/ ESD Rated/ Logic Level/ P-Channel Power MOSFET From old datasheet system 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω,额定静电释放P沟道功率MOS场效应管)
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INTERSIL[Intersil Corporation]
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IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances From old datasheet system N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
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IXYS[IXYS Corporation] IXYS, Corp.
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B82476-A1684-M B82476-A1103-M B82476-A1104-M B8247 |
INDUCTOR 100UH 1200MA Rated inductance 10 to 1000 mH Rated current 300 to 3800 mA
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EPCOS[EPCOS]
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