| PART |
Description |
Maker |
| BUV21 BUV21_D ON0257 |
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola, Inc.
ON Semiconductor
|
| BUV22_D ON0258 BUV22 |
SITCHMODE Series NPN Silicon Power Transistor
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS
|
ON Semiconductor
Motorola, Inc
|
| BU500 |
NPN SILICON POWER METAL TRANSISTOR
|
Motorola Inc
Motorola, Inc
|
| BUX42 |
NPN SILICON POWER METAL TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BUY18S BUY18S-JQRR1 SFBUY18S |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA
7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA HERMETIC SEALED, METAL, TO-3, 2 PIN
|
TT electronics Semelab Limited
TT electronics Semelab, Ltd.
Seme LAB
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| BDY23.MOD BDY23.MODR1 BDY23 |
Bipolar NPN Device in a Hermetically sealed TO3
6 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA HERMETIC SEALED, METAL, TO-3, 2 PIN
|
Seme LAB
TT electronics Semelab, Ltd.
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| WSK06125L000FEA WSK06121L000FEA |
Power Metal Strip Resistors, High Power,
Metal Strip/Wire Resistor, RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 275 ppm, 0.001 ohm, SURFACE MOUNT, 0612, CHIP, GREEN
|
Vishay Siliconix
Vishay Dale
|
