PART |
Description |
Maker |
UTCHE8550 HE8550-TO-92 |
PNP EPITAXIAL SILIC ON TRANSISTOR
|
友顺科技股份有限公司 UTC[Unisonic Technologies]
|
BC548ABC BC547ABC ON0152 BC546 BC548C BC548 BC546B |
Amplifier Transistor NPN From old datasheet system CASE 29-04, STYLE 17 TO-2 (TO-226AA) Amplifier Transistors(NPN Silicon) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
MPS6717RLRA MPS6717_D ON2331 MPS6717 |
One Watt Amplifier Transistor(NPN Silicon) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 One Watt Amplifier Transistor 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AE CASE 29?4, STYLE 1 TO?2 (TO?26AA) From old datasheet system
|
ON Semiconductor Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
KTC4793 |
General Purpose Transistor TRIPLE DIFFUSED NPN TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
MPSA05 |
General Purpose Transistor EPITAXIAL PLANAR NPN TRANSISTOR (DRIVER STAGE AMPLIFIER, VOLTAGE AMPLIFIER)
|
Korea Electronics (KEC) KEC(Korea Electronics)
|
UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
2SC5242 |
Power Amplifier Application NPN Transistor(功率放大器用NPN晶体 功率放大器应用NPN晶体管(功率放大器用npn型晶体管 NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)
|
Toshiba, Corp.
|
MMBTA0511 MMBTA05-TP |
NPN Small Signal General Purpose Amplifier Transistors TRANSISTOR NPN GP 60V SOT23 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components, Corp.
|
2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五(巴西)总裁| 500mA的一(c)|36 NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器,噪声抑制应用的NPN硅外延平面型晶体 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd. Sanyo Electric Co.,Ltd.
|
KTC3878 KTC3883 |
TRIPLE DIFFUSED PNP TRANSISTOR(HIGH FREQUENCY/ VHF BAND AMPLIFIER) EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, HF, VHF AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|