PART |
Description |
Maker |
APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT10050LVR 10050LVR |
POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT1001RSVR APT1001RSVRG |
100% Avalanche Tested Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation ADPOW[Advanced Power Technology]
|
APT10045JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 21A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
APT10050LLC APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm Power MOS VITM is a new generation of low gate charge, high voltage
|
Advanced Power Technology Ltd.
|
APT10025PVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 33A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT1004R2BN APT1004RBN |
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV 1000V 4.4A 4.00 Ohm / 1000V 4.0A 4.20 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT10050JVFR |
POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
MCT3D65P100F2 MCT3A65P100F2 |
65A, 1000V, P-Type MOS-Controlled Thyristor (MCT) DIODE ZENER SINGLE 500mW 3.9Vz 5mA-Izt 0.05 3uA-Ir 1 PowerDI-323 3K/REEL 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
APT10078BFLL APT10078SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 14A 0.780 Ohm
|
Advanced Power Technology Ltd.
|