| PART |
Description |
Maker |
| MPSA05 MMBTA05 MPSA05RA |
NPN General Purpose Amplifier 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Medium Power Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MPS3391 MPS929 MPS930A MPS3390 MPS3396 MPS3397 MPS |
NPN silicon amplifier transistor. 45 V.
(MPS929 / MPS930A) AMPLIFIER TRANSISTOR
AMPLIFIER TRANSISTOR 放大器晶体管
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| MSC2295BT1 MSC2295-BT1 MSC2295-CT1 ON2374 |
NPN RF Amplifier Transistors Surface Mount Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN RF Amplifier Transistors Surface Mount UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
CASE 318D3, STYLE 1 SC9
From old datasheet system
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| KTC3880 KTC3911 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER) 外延平面NPN晶体管（高频低噪声放大器，甚高频波段放大器）
EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)
|
KEC Holdings
KEC(Korea Electronics)
|
| 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
|
NEC[NEC]
NEC Corp.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| MPS918 MPS918ZL1 |
Amplifier Transistor NPN
Amplifier Transistors(NPN Silicon)
|
ON Semiconductor
|
| BD525 BD529 BD527 BD525-5 BD529-5 |
NPN silicon annular amplifier transistor. 10 W, 100 V.
NPN silicon annular amplifier transistor. 10 W, 60 V.
NPN SILICON AMPLIFIER TRANSISTORS
|
MOTOROLA[Motorola, Inc]
ETC
|
| 2SC4536 2SC4536QS |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 晶体管|晶体管|叩| 15V的五（巴西）总裁|毫安一c）|43
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Actel, Corp.
NEC[NEC]
|
| 2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|36
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器，噪声抑制应用的NPN硅外延平面型晶体
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd.
Sanyo Electric Co.,Ltd.
|
| 2SC945 2SC94509 2SC945L-X-T92-K 2SC945L-X-T92-B 2S |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| 2SC1815-X-T92-B 2SC1815-X-T92-K 2SC1815 2SC1815G-X |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
150 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
