| PART |
Description |
Maker |
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| AT73C224-A AT73C224-B AT73C224-E AT73C224-G AT73C2 |
Power Management and Analog Companions (PMAAC)
1-CHANNEL POWER SUPPLY SUPPORT CKT, QCC32
Ultra-low Power Real-time Clock (RTC) and Backup Battery Management
Activation of the Power Management Modules via Dedicated Enable Pin
|
聚兴科技股份有限公司
ATMEL Corporation
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| TA8260AH |
Max Power 40 W BTL 4CH Audio Power IC
Max Power 40 W BTL 】 4CH Audio Power IC
Max Power 40 W BTL x 4CH Audio Power IC
RAC15-TA(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Auxilary Voltage (Vdc): 12V; Features: Compact AC-DC Power
|
Toshiba Semiconductor
Toshiba Corporation
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| NTC10D20 NTC100D10 NTC100D11 NTC100D9 NTC10D10 NTC |
Conversion power, switch mode power supply, UPS power protection
|
List of Unclassifed Man...
|
| 2SD1445A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1499 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SB0938 2SB0938A 2SB938 2SB938A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD2659 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
