| PART |
Description |
Maker |
| M57915L |
HYBRID IC FOR DRIVING TRANSISTOR MODULES
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC2484 2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A
SILICON EPITAXAL BASE VLESA TRANSISTOR
|
Panasonic Semiconductor
|
| TND027MP |
TRANSISTOR, NPN, TO-3PB; Transistor type:Power General Purpose; Voltage, Vceo:140V; Current, Ic continuous a max:12A; Voltage, Vce sat max:2.5V; hfe, min:60; ft, typ:15MHz; Case style:TO-3PB; Current, Ib:1.5A; Current, Ic av:12A; RoHS Compliant: Yes
Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| ZXTN10150DZ |
150V NPN LED DRIVING TRANSISTOR
|
DIODES
|
| ZXTP4003G ZXTP4003GTA |
100V PNP LED DRIVING TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| ZXTN4000ZTA ZXTN4000Z-15 |
60V NPN LED DRIVING TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| ZXTN4004Z ZXTN4004ZTA |
150V NPN LED DRIVING TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| BUL54AFI BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 4 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| TPR175 |
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| EN7691 |
Excellent Power Device, Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving, Single MP
|
ON Semiconductor
|
