PART |
Description |
Maker |
CDP1823C CDP1823CD3 CDP1823C_3 |
High-Reliability CMOS 128-Word x 8-Bit Static RAM
|
INTERSIL[Intersil Corporation]
|
CXK5B18120TM- CXK5B18120TM-12 CXK5B18120TM |
128 x 64 pixel format, LED Backlight available -65536-word x 18-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
HM6167LP-8 HM6167P-6 HM6167P-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns 16384-word x 1-bit high speed CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
BC857C BC856A BC857A BC856B BC857B BC858B BC858C B |
PNP SMALL SIGNAL TRANSISTOR 310MW High Speed CMOS Logic Hex Buffer/Line Driver with Non-Inverting 3-State Outputs 16-PDIP -55 to 125 High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125 High Speed CMOS Logic Dual Decade Ripple Counter 16-SOIC -55 to 125 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125 High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125 High Speed CMOS Logic Octal D-Type Flip-Flop with Reset 20-SOIC -55 to 125 High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-SOIC -55 to 125
|
Micro Commercial Compon... MCC[Micro Commercial Components] Micro Commercial Components Corp.
|
CDP1802A1 CDP1802BCQ CDP1802A CDP1802AC CDP1802ACD |
Microprocessor, 8-Bit, CMOS, High-Reliability CMOS 8-Bit Microprocessors
|
INTERSIL[Intersil Corporation]
|
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
|
CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM 65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group SONY
|
CAT28F020 CAT28F020-12 CAT28F020-70 CAT28F020-90 C |
150 x 32 pixel format, LED Backlight available 128 x 64 pixel format, White LED backlight 128 x 64 pixel format, White and Yellow-Green backlight 2 Megabit CMOS Flash Memory 2兆位闪存的CMOS High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-SOIC -55 to 125 2兆位闪存的CMOS
|
http:// CATALYST[Catalyst Semiconductor] HIROSE ELECTRIC Co., Ltd. TE Connectivity, Ltd.
|
IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology IDT
|
IDT72V8988 IDT72V8988DB IDT72V8988J IDT72V8988J8 7 |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 128 x 128 TSI, 4 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology IDT
|