| PART |
Description |
Maker |
| CGY2030MC1 |
DECT 500 mW power amplifier
|
Philips
|
| MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000 |
DECT Power Amplifier 1880 - 1930 MHz
|
Tyco Electronics
|
| ZAPD-21 ZAPD-21-N |
500 MHz - 2000 MHz RF/MICROWAVE COMBINER, 1 dB INSERTION LOSS ROHS COMPLIANT, CASE F14
Power Splitter/Combiner 2 Way-0 50ヘ 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50惟 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 500 to 2000 MHz
|
Mini-Circuits
|
| PBL38582 PBL385821NS PBL385821SOS PBL385821SOT PBL |
Telephone Line interface circuit for DECT/ DAM/ CT Unisolated or Isolated
Telephone Line interface circuit for DECT DAM CT Unisolated or Isolated
Telephone Line interface circuit for DECT, DAM, CT Unisolated or Isolated 电话线接口电路面向DECT，大坝，或孤立的CT Unisolated
TELECOM-SLIC, PDSO20
|
http://
Ericsson Microelectronics
ERICSSON[Ericsson]
ERICSSON POWER MODULES AB
|
| APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| ZHL-5W-1 |
50High Power 5 to 500 MHz
50Ω High Power 5 to 500 MHz
50ヘ High Power 5 to 500 MHz
|
Mini-Circuits
|
| MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
| ZHL-5W-1 |
50High Power 5 to 500 MHz 5 MHz - 500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
Mini-Circuits
|
| ZFL-500 ZFL-500-BNC |
50Low Power 0.05 to 500 MHz 0.05 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Mini-Circuits
|
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| U2761B |
DECT RF / IF IC
|
TEMIC[TEMIC Semiconductors]
|
