PART |
Description |
Maker |
BFG93A BFG93A_X BFG93 BFG93A/X BFG93X |
NPN 6 GHz wideband transistors(NPN 6G赫兹 宽带晶体 npn GHz的宽带晶体管(npn型第六代赫兹宽带晶体管)
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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PUMH20 PEMH20 PUMH20115 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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2SD1572 |
Silicon NPN Triple Diffused(涓???╂?NPN?朵?绠? 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Hitachi,Ltd.
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2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB NPN BIPOLAR TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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PUMH13115 PEMH13-PUMH13-15 |
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. NPN/NPN resistor-equipped transistors R1 = 4.7 k? R2 = 47 k?
|
NXP Semiconductors
|
BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PEMH14 PUMH14 5C H1- H1P H1T H1W |
NPN/NPN resistor-equipped transistors R1 = 47 kohm, R2 = open NPN/NPN配电阻型晶体管;R1=47千欧姆,R2=开 NPN/NPN resistor-equipped transistors R1 = 47 kW-ohm, R2 = open
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG |
NPN 8 GHz wideband transistors NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
2SC5346 2SC5346S |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-71VAR 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
|
Panasonic, Corp. Matsshita / Panasonic Panasonic Semiconductor
|
BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR 300 V, NPN, Si, POWER TRANSISTOR 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61 10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
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UPA804TC UPA804 UPA804TC-T1 PA804TC |
NPN Epitaxial Transisitor(NPN澶?欢?朵?绠? NPN Epitaxial Transisitor(NPN外延晶体 NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
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NEC Corp. NEC[NEC]
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