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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
n80 K4S511633CNBSP K4S511633C-YL_n80 K4S511633C K4S511633C-N K4S511633C-P K4S511633C-YL K4S511633C-YL_N1H K4S511633C-YL_N1L K4S511633C-YL/n80 K4S511633C-YL/N1L K4S511633C-YL/N1H K4S511633C-Yn80 K4S511633C-YP1L
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| OCR Text |
... 54balls DDP CSP
K4S511633C-YL/n80 K4S511633C-YL/N1H K4S511633C-YL/N1L
CMOS SDRAM
GENERAL DESCRIPTION
The K4S511633C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated w... |
| Description |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
32Mx16 Mobile SDRAM 54CSP 1/CS 32Mx16移动SDRAM 54CSP 1/CS
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| File Size |
60.20K /
8 Page |
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Samsung Electronic
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| Part No. |
K4S643233E-SEN
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| OCR Text |
...vttl 90-ball fbga k4s643233e-se/n80 125mhz k4s643233e-se/n10 100mhz k4s643233e-te/n70 143mhz 86 tsop(ii) k4s643233e-te/n80 125mhz k4s643233e-te/n10 100mhz functional block diagram samsung electronics reserves the right to change products or... |
| Description |
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
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| File Size |
70.19K /
12 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFM7n80 IXFH7n80
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| OCR Text |
n80 VDSS = 800 V IXFM 7 n80 ID (cont) = 7 A
RDS(on) = 1.4 W trr = 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient ... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
77.07K /
4 Page |
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it Online |
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