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  mrf21180 Datasheet PDF File

For mrf21180 Found Datasheets File :: 4    Search Time::1.094ms    
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    MRF21180 MRF21180R6 MRF21180R606

Freescale Semiconductor, Inc
Part No. mrf21180 mrf21180R6 mrf21180R606
OCR Text mrf21180 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier am...
Description RF Power Field Effect Transistor

File Size 326.84K  /  12 Page

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    Motorola
Part No. mrf21180
OCR Text mrf21180 mrf21180s motorola rf device data the rf subCmicron mosfet line nCchannel enhancementCmode lateral mosfets designed for wCcdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma ...
Description mrf21180, mrf21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETs

File Size 372.35K  /  12 Page

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    Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. EB212
OCR Text ... File Format: MHz : : : : mrf21180 John Q. Designer 01/01/2003 mrf21180_zin.s1p Z RE IM 2110 2140 2170 ! ! End of File 2.45 2.39 2.16 - 2.08 - 2.51 - 3.14 Freescale Semiconductor, Inc... Input Matching Network ...
Description Using Data Sheet Impedances for RF LDMOS Devices

File Size 319.84K  /  8 Page

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    MRF21180R6 MRF21180

Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
Part No. mrf21180R6 mrf21180
OCR Text mrf21180/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be...
Description 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor

File Size 516.52K  /  12 Page

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