...Diode POW-R-BLOKTM Modules
130 amperes/1200-1600 Volts
L - DIA. (2 TYP.) A J
A1K2
(4 TYP.)
K1 A1K2
P - M8 THD (4 TYP.)
A2
C
K1 G1
H
F B
E
F B .110 TAB
M
K
D G N
E
Description: Powerex SCR/Diode PO...
...is the desired current limit in amperes. Switch Output. P-channel MOSFET drain. Bypass OUT with a 0.1F capacitor to ground. Fault-Indicator Output. This open-drain output goes low when in current limit or when the die temperature exceeds +1...
Description
1A / Current-Limited / High-Side P-Channel Switch with Thermal Shutdown From old datasheet system 1A Current-Limited High-Side P-Channel Switch with Thermal Shutdown 1A, Current-Limited, High-Side P-Channel Switch with Thermal Shutdown 2A / Current-Limited / High-Side P-Channel Switch with Thermal Shutdown
Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
...V, 10V & 15V ID, DRAIN CURRENT (amperes) ID, DRAIN CURRENT (amperes) 200 6.5V 200 250 VGS=15V VGS=10V VGS=7V 6.5V
150
6V
150
6V
...1200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4...
Description
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm