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NXP Semiconductors N.V.
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Part No. |
PSMN6R0-30YLB PSMN6R0-30YLB-15
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OCR Text |
...gate drive utilising nextpower superjunction technology ? ultra low qg, qgd, & qoss for high system efficiencies at low and high loads 1.3 applications ? dc-to-dc converters ? load switching ? synchronous buck regulator 1.4 quick referen... |
Description |
N-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technology N-channel 30 V 6.5 m logic level MOSFET in LFPAK using
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File Size |
310.81K /
15 Page |
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it Online |
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Icemos
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Part No. |
ICE15N60FP
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OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
539.86K /
9 Page |
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it Online |
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Icemos
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Part No. |
ICE15N65FP
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OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
543.68K /
9 Page |
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it Online |
Download Datasheet
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Icemos Technology
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Part No. |
ICE10N60FP
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OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
517.36K /
9 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
PSMN6R0-25YLB PSMN6R0-25YLB-15
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OCR Text |
...gate drive utilising nextpower superjunction technology ? ultra low qg, qgd, & qoss for high system efficiencies at low and high loads 1.3 applications ? dc-to-dc converters ? load switching ? synchronous buck regulator 1.4 quick referen... |
Description |
N-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technology N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
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File Size |
310.59K /
15 Page |
View
it Online |
Download Datasheet
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![](images/bg04.gif) |
Icemos Technology
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Part No. |
ICE10N65FP
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OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
521.33K /
9 Page |
View
it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
PSMN1R0-30YLC PSMN1R0-30YLC11
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OCR Text |
...gate drive utilising nextpower superjunction technology ? ultra low qg, qgd, and qoss for high system efficiencies at low and high loads ? ultra low rdson and low parasitic inductance 1.3 applications ? dc-to-dc converters ? lithium-ion... |
Description |
N-channel 30 V 1.15 m logic level MOSFET in LFPAK using NextPower technology N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology N-channel 30 V 1.15 mlogic level MOSFET in LFPAK using NextPower technology
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File Size |
312.72K /
15 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
PSMN0R9-25YLC
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OCR Text |
...gate drive utilising nextpower superjunction technology ? ultra low qg, qgd and qoss for high system efficiencies at low and high loads ? ultra low rdson and low parasitic inductance 1.3 applications ? dc-to-dc converters ? lithium-ion ... |
Description |
N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
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File Size |
311.48K /
15 Page |
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it Online |
Download Datasheet
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Icemos Technology
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Part No. |
ICE10N73
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OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
Description |
Enhancement Mode MOSFET
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File Size |
429.79K /
8 Page |
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it Online |
Download Datasheet
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Icemos Technology
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Part No. |
ICE11N65FP
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OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
517.30K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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