...cuit board.
0.4
1.00.1
r
0.
4.50.1
7
Unit A A V V V
60 50 7 160 0.3 150 3.5 460 0.5
VCE(sat)
V MHz pF
*h
FE
rank classification
Q 160 ~ 260 r 210 ~ 340 s 290 ~ 460 hFE
rank
1
Transistor
PC -...
Description
silicon NPN epitaxial planer type small signal transistorr>
...5 r0.9 r0.9
0.4
1.00.1
r
0. 7
s Absolute Maximum ratings
Parameter Collector to base voltage Collector to 2sD638 2sD639 2sD638 VCEO VEBO ICP IC PC Tj Tstg VCBO symbol
0.85
0.550.1
3
2
emitter voltage 2sD639 Em...
Description
silicon NPN epitaxial planer type(For medium-power general amplification)r>
...cuit board.
0.4
1.00.1
r
0.
4.50.1
7
V V
Emitter to base voltage Forward current transfer ratio Collector to emitter...s 290 ~ 460 T 360 ~ 650 hFE
rank
1
Transistor
PC -- Ta
500 160 140
2sD661, 2sD661A
IC...
Description
silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)r>
...fication
P 30 ~ 100 Q 60 ~ 150 r 100 ~ 220 hFE
rank
4.10.2
High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the prin...
Description
silicon NPN epitaxial planer type(For high breakdown voltage general amplification) 70 mA, 400 V, NPN, si, sMALL sIGNAL TrANsIsTOrr>
...Q 90 ~ 155 2sD814 2sD814A PQ LQ r 130 ~ 220 Pr Lr='#FF0000'>r s 185 ~ 330 Ps Ls
Marking symbol
0 to 0.1
0.1 to 0.3 0.40.2
0.8
0.16 -0.06
+0.1
1
Transistor
PC -- Ta
240 120 Ta=25C 200 100 100
2sD814, 2sD814A
IC -- VCE
120 ...
Description
silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)r>silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)r>
...Q 85 ~ 170 2sD874 2sD874A ZQ YQ r 120 ~ 240 Zr Yr='#FF0000'>r s 170 ~ 340 Zs Ys
Pulse measurement
Marking symbol
2.50.1
Large collector power dissipation PC. Low collector to emitter='#FF0000'>r saturation voltage VCE(sat). Mini Power type package, all...
Description
silicon NPN epitaxial planer type(For low-frequency power amplification)r>
...
rank classification
rank hFE1 r 130 ~ 220 Xr='#FF0000'>r s 185 ~ 330 Xs
Marking symbol
2.50.1
+0.25
V V
1
Transistor
PC -- Ta
1.4
2sD875
IC -- VCE
Collector to emitter='#FF0000'>r saturation voltage VCE(sat) (V)
1.2 Ta=25C 1.0 IB=10mA 9...
Description
silicon NPN epitaxial planer type(For low-frequency power amplification)r>
...ted circuit board.
1.00.1
r
0.
4.50.1
7
Unit nA A V V V
120 120 7 180 700 0.6 200 150
VCE(sat)
V MHz mV
*h
FE
rank classification
r 180 ~ 360 s 260 ~ 520 T 360 ~ 700 hFE
rank
1
Transistor
PC --...
Description
silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)r>