...rleave) *4 banks operation *All inputs are sampled at the positive edge of the system clock *Burst Read single write operation *Auto & Self ...outputs are multiplexed on the same pins. Makes data output Hi-Z, Latches row addresses on the posit...
...rleave) *4 banks operation *All inputs are sampled at the positive edge of the system clock *Burst Read single write operation *Auto & Self ...outputs are multiplexed on the same pins. Makes data output Hi-Z, Latches row addresses on the posit...
...rleave) *4 banks operation *All inputs are sampled at the positive edge of the system clock *Burst Read single write operation *Auto & Self ...outputs are multiplexed on the same pins. Makes data output Hi-Z, Latches row addresses on the posit...
...rleave) *4 banks operation *All inputs are sampled at the positive edge of the system clock *Burst Read single write operation *Auto & Self ...outputs are multiplexed on the same pins. Makes data output Hi-Z, Latches row addresses on the posit...
Description
Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
...rleave) *4 banks operation *All inputs are sampled at the positive edge of the system clock *Burst Read single write operation *Auto & Self ...outputs are multiplexed on the same pins. Makes data output Hi-Z, Latches row addresses on the posit...
Description
Synchronous DRAM(2M X 16 Bit X 4 Banks) Synchronous DRAM(2M X 16 Bit X 4 Banks) 同步DRAM米16位4个银行)