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106K0 CM100 CSFD26 SFFR160N BA440 2012S 1020C UPD4713
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  dv dt Datasheet PDF File

For dv dt Found Datasheets File :: 28533    Search Time::2.531ms    
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    IRLU8256PBF IRLR8256PBF IRLR8256TRPBF

International Rectifier
Part No. IRLU8256PBF IRLR8256PBF IRLR8256TRPBF
OCR Text ....T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor...
Description HEXFET Power MOSFET

File Size 353.96K  /  11 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...5C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Ava...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V G S RDS(on) = 0.48 ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing ...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...5C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Ava...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.20 G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...5C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Ava...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.117 G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    T830-600W T820W04 T820-800W T830-800W T820-600W

STMicroelectronics
Part No. T830-600W T820W04 T820-800W T830-800W T820-600W
OCR Text ...mA mA mA V/s A/ms IL (2) dv/dt VD=67% VDRM Gate open Tj = 125C Without snubber Tj = 125C (dI/dt)c (2) STATIC CHARACTERISTICS Symbol VTM(2) VTO (2) Test Conditions ITM = 11A tp = 380s Tj = 25C Tj = 125C Tj = 125C Tj = 25C...
Description 8A SNUBBERLESSTM TRIAC

File Size 59.42K  /  5 Page

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    T630-600W T620W04 T620-800W T620-600W T630-800W

STMicroelectronics
Part No. T630-600W T620W04 T620-800W T620-600W T630-800W
OCR Text ...mA mA mA V/s A/ms IL (2) dv/dt VD=67% VDRM Gate open Tj = 125C Without snubber Tj = 125C (dI/dt)c (2) STATIC CHARACTERISTICS Symbol VTM(2) VTO (2) Test Conditions ITM = 8.5 A tp = 380s Tj = 25C Tj = 125C Tj = 125C Tj = 2...
Description 6A SNUBBERLESTM TRIAC

File Size 59.49K  /  5 Page

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    IRLU8259PBF IRLR8259PBF IRLR8259TRPBF

International Rectifier
Part No. IRLU8259PBF IRLR8259PBF IRLR8259TRPBF
OCR Text ....T. VDS Waveform Diode Recovery dv/dt - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent...
Description HEXFET Power MOSFET

File Size 363.12K  /  11 Page

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