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意法半导
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| Part No. |
STPCINDUSTRIAL
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| OCR Text |
...ic clock down to 8hz n supports apm n supports rtc, interrupts and dmas wake up exca is a trademark of pcmcia / jeida. panellink is a trademark of siliconimage, inc
general description 4/40 1 general description at the heart of the stpc i... |
| Description |
High Performance Industrial PC on a Chip(高性能工业PC)
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| File Size |
414.77K /
40 Page |
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意法半导
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| Part No. |
STPCCONSUMER
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| OCR Text |
...ity detector n supports smm and apm. n supports stopclk. n supports io trap & restart. n independent peripheral time-out timer to monitor hard disk, serial & parallel ports. n slow system clock down to 8mhz n slow host clock down to 8hz n s... |
| Description |
Multimedia PC on a Chip(多媒体PC)
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| File Size |
393.66K /
34 Page |
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it Online |
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Anpec Electronics Corporation
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| Part No. |
apm9922KC-TU apm9922KC-TUL apm9922KC-TRL
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| OCR Text |
... 1in 2 pad area, t 10sec. apm 9922 k symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 20 v v ds = 16 v, v gs =... |
| Description |
Dual N-Channel Enhancement Mode MOSFET
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| File Size |
209.57K /
10 Page |
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it Online |
Download Datasheet |
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Anpec Electronics Corporation
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| Part No. |
apm2801BC-TR apm2801BC-TRL apm2801BC-TU apm2801BC-TUL
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| OCR Text |
...on 1in2 pad area, t 10sec. apm 2801b symbol parameter test condition min. typ. max. unit [mosfet] static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a - 20 v v ds... |
| Description |
P-Channel Enhancement Mode MOSFET with Schottky Diode
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| File Size |
216.87K /
11 Page |
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it Online |
Download Datasheet |
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Anpec Electronics Corporation
Anpec Electronics, Corp.
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| Part No. |
apm2800BC-TR apm2800BC-TRL apm2800BC-TU apm2800BC-TUL
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| OCR Text |
...a r e a , t 1 0 s e c . apm 2800b symbol parameter test condition min. typ. max. unit [mosfet] static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 20 v v ds = 16... |
| Description |
N-Channel Enhancement Mode MOSFET with Schottky Diode N沟道增强型MOS管与肖特基二极管
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| File Size |
216.98K /
11 Page |
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it Online |
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Anpec Electronics Corporation
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| Part No. |
apm4435KC-TUL apm4435KC-TR apm4435KC-TRL
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| OCR Text |
... 1in 2 pad area, t 10sec. apm 4435k symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a - 30 v v ds = - 24 v, ... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
185.25K /
10 Page |
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it Online |
Download Datasheet |
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Anpec Electronics Corporation
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| Part No. |
apm7313KC-TU apm7313KC-TUL apm7313KC-TRL
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| OCR Text |
...in 2 pad area, t 10sec. apm 7313k symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 30 v v ds = 20 v, v gs =... |
| Description |
Dual N-Channel Enhancement Mode MOSFET
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| File Size |
171.60K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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