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IXYS Corporation
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| Part No. |
IXFN32N80P
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| OCR Text |
...0 s, duty cycle d 2 % sot-227b outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017... |
| Description |
PolarHV HiPerFET Power MOSFET
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| File Size |
88.05K /
4 Page |
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it Online |
Download Datasheet
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IXYS[IXYS Corporation]
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| Part No. |
IXGN200N60 IXGN200N60B
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| OCR Text |
... V A A A A W C C C V~ V~
SOT-227b, miniBLOC
E G
E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter
50/60 Hz IISOL 1 mA
t = 1 min t=1s
2500 3000
Mounting torque Termina... |
| Description |
HiPerFASTTM IGBT
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| File Size |
66.96K /
2 Page |
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it Online |
Download Datasheet |
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IXYS
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| Part No. |
IXFE80N50
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| OCR Text |
... ? ? features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc co... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
100.23K /
2 Page |
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it Online |
Download Datasheet |
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IXYS
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| Part No. |
IXGN50N60BD2
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| OCR Text |
...buck & boost configurations sot-227b, minibloc e 153432 2 1 4 3 ...bd2 ...bd3 ixgn50n60bd2 1 = emitter; 2 = gate 3 = collector; 4 = diode cathode ixgn50n60bd3 1 = emitter/diode cathode; 2 = gate 3 = collector; 4 = diode ... |
| Description |
IGBT Modules: Boost Configurated IGBT Modules
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| File Size |
146.46K /
5 Page |
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it Online |
Download Datasheet |
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IXYS, Corp.
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| Part No. |
IXGN400N60A3
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| OCR Text |
...00a v ce(sat) 1.25v sot-227b, minibloc g = gate, c = collector, e = emitter |
| Description |
400 A, 600 V, N-CHANNEL IGBT MINIBLOC-4
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| File Size |
198.52K /
5 Page |
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it Online |
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