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  1v-vf Datasheet PDF File

For 1v-vf Found Datasheets File :: 7052    Search Time::1.843ms    
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    BU2527DF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2527DF
OCR Text ... 5V 10% t fr V F time 10 1V 5V V F time V fr 1 0.1 1 10 IC / A 100 Fig.3. Definition of anti-parallel diode Vfr and tfr Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE September 1997 3 Re...
Description Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 80.99K  /  7 Page

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    BU2527DX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2527DX
OCR Text ... 5V 10% t fr V F time 10 1V 5V V F time V fr 1 0.1 1 10 IC / A 100 Fig.3. Definition of anti-parallel diode Vfr and tfr Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE September 1997 3 Re...
Description Silicon Diffused Power Transistor

File Size 83.04K  /  7 Page

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    BU4506DF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4506DF
OCR Text ...Csat 90 % IC 100 hFE VCE = 1V BU4506DF/X/Z Ths = 25 C Ths = 85 C 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 IC / A 10 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. ...
Description Silicon Diffused Power Transistor

File Size 56.19K  /  6 Page

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    BU4506DX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4506DX
OCR Text ...Csat 90 % IC 100 hFE VCE = 1V BU4506DF/X/Z Ths = 25 C Ths = 85 C 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 IC / A 10 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. ...
Description Silicon Diffused Power Transistor

File Size 58.37K  /  6 Page

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    BU4506DZ

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4506DZ
OCR Text ...Csat 90 % IC 100 hFE VCE = 1V BU4506DF/X/Z Ths = 25 C Ths = 85 C 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 IC / A 10 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. ...
Description Silicon Diffused Power Transistor

File Size 56.77K  /  6 Page

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    BU4507DF BU4507

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4507DF BU4507
OCR Text ...ICsat 90 % 100 hFE VCE = 1V Ths = 25 C Ths = 85 C IC 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 IC / A 10 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. I F ...
Description Silicon Diffused Power Transistor

File Size 53.29K  /  6 Page

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    BU4507DX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4507DX
OCR Text ...ICsat 90 % 100 hFE VCE = 1V Ths = 25 C Ths = 85 C IC 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 IC / A 10 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. I F ...
Description Silicon Diffused Power Transistor

File Size 55.48K  /  6 Page

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    BU4507DZ

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4507DZ
OCR Text ...ICsat 90 % 100 hFE VCE = 1V Ths = 25 C Ths = 85 C IC 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 IC / A 10 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. I F ...
Description Silicon Diffused Power Transistor

File Size 54.02K  /  6 Page

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    BU4508DF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU4508DF
OCR Text ...at 90 % IC 100 hFE VCE = 1V BU4508DF/X/Z Ths = 25 C Ths = 85 C 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 IC / A 10 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. I ...
Description Silicon Diffused Power Transistor(硅扩散功率型晶体 8 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 52.42K  /  6 Page

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    BU4508DX NXPSEMICONDUCTORS-BU4508DX

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BU4508DX NXPSEMICONDUCTORS-BU4508DX
OCR Text ...at 90 % IC 100 hFE VCE = 1V BU4508DF/X/Z Ths = 25 C Ths = 85 C 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 IC / A 10 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. I ...
Description Silicon Diffused Power Transistor

File Size 54.66K  /  6 Page

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For 1v-vf Found Datasheets File :: 7052    Search Time::1.843ms    
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