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PL9122 RT500 L4002 TQG100 UPA1722 90M6T T54FCT CD401
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    IRGPS40B120UDP

International Rectifier
Part No. IRGPS40B120UDP
OCR Text ...onditions qg total gate charge (turn-on) ??? 340 510 i c = 40a qge gate - emitter charge (turn-on) ??? 40 60 nc v cc = 600v q gc gate - collector charge (turn-on) ??? 165 248 v ge = 15v e on turn-on switching loss ??? 1400 1750 j i c = ...
Description Insulated Gate Bipolar Transistor
File Size 348.34K  /  12 Page

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    IRG4ZH71KD

International Rectifier
Part No. IRG4ZH71KD
OCR Text ...nditions q g total gate charge (turn-on) 380 570 i c = 42a q ge gate - emitter charge (turn-on) 48 72 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 120 180 v ge = 15v t d(on) turn-on delay time 80 t r rise time 45...
Description 1200V Copack IGBT in a SMD-10 package
File Size 241.49K  /  10 Page

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    IRG4ZC71KD

International Rectifier
Part No. IRG4ZC71KD
OCR Text ...nditions q g total gate charge (turn-on) 343 515 i c = 60a q ge gate - emitter charge (turn-on) 44 66 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 161 242 v ge = 15v t d(on) turn-on delay time 140 t r rise time 6...
Description 600V Copack IGBT in a SMD-10 package
File Size 231.99K  /  10 Page

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    AON7458

Alpha & Omega Semiconductors
Part No. AON7458
OCR Text ... capacitance dynamic parameters turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =125v, i d =1.5a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge turn-on delaytime gate source charge drain-s...
Description 250V,5A N-Channel MOSFET
File Size 521.59K  /  6 Page

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    IRFB31N20D IRFS31N20DTRL

International Rectifier, Corp.
Part No. IRFB31N20D IRFS31N20DTRL
OCR Text ... 33 49 v gs = 10v, ? t d(on) turn-on delay time CCC 16 CCC v dd = 100v t r rise time CCC 38 CCC i d = 18a t d(off) turn-off delay time CCC 26 CCC r g = 2.5 w t f fall time CCC 10 CCC r d = 5.4 w ? c iss input capacitance CCC 2370 CC...
Description Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
File Size 192.77K  /  11 Page

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    IBM Microeletronics
Part No. IBM42M10SCYAA10 IBM42M10LCYAA20
OCR Text ...ing modified by the transmitter turn-on/turn-off delays. if the glm does not receive a responding optical signal during the decode 1 time period, it continues to emit this pulse every 10.1 sec. when the fiber path is restored as shown in ...
Description 1063 MB/S Gigabit Link Module(1063 MB/S 吉位连接模块（高性能集成光纤收发器）)
File Size 330.93K  /  31 Page

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    Allegro Micro Systems
Part No. A4940
OCR Text ...50 500 750 ma gate output drive turn-on time t r c load = 1 nf, 20% to 80% points ? 35 ? ns turn-off time t f c load = 1 nf, 80% to 20% points ? 20 ? ns pull-up on resistance r ds(on)up t j = 25c, i ghx = ?150 ma 8 11 16 t j = 150c,...
Description Automotive Full Bridge MOSFET Driver
File Size 472.10K  /  14 Page

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    GP30B120KD-E

International Rectifier
Part No. GP30B120KD-E
OCR Text ...ons fig. q g total gate charge (turn-on) 169 254 i c = 25a 23 q ge g ate - em itter charge (turn-on) 19 29 nc v cc =600v ct 1 q gc gate - collector charge (turn-on) 82 123 v ge = 15v e on turn-o n switching loss 1066 1250 i c = 25a, v c...
Description Search --To IRGP30B120KD-E
File Size 171.17K  /  12 Page

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    GP30B120KD-EP

International Rectifier
Part No. GP30B120KD-EP
OCR Text ...ons fig. q g total gate charge (turn-on) 169 254 i c = 25a 23 q ge gate - emitter charge (turn-on) 19 29 nc v cc =600v ct 1 q gc gate - collector charge (turn-on) 82 123 v ge = 15v e on turn-on switching loss 1066 1250 i c = 25a, v cc ...
Description Search --To IRGP30B120KD-EP
File Size 203.70K  /  12 Page

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Price and Availability
 
Price & Availability of turn
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TME

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