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Fairchild Semiconductor, Corp.
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Part No. |
SGU20N40LTU
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OCR Text |
...olar transistors (igbts) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. they also have wide noise immunity. these devices are very suitable f... |
Description |
400 V, N-CHANNEL IGBT, TO-251 IPAK-3
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File Size |
207.14K /
9 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
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Part No. |
FDMC8296 FDMC829610
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OCR Text |
trench ? mosfet fdmc8296 n-channel power trench ? mosfet 30v, 18a, 8.0m features max r ds(on) = 8.0m at v gs = 10v, i d = 12a max r ds(on) = 13.0m at v gs = 4.5v, i d = 10a high performance trench technology for extr e... |
Description |
30V N-Channel Power trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Power trench? MOSFET 30V, 18A, 8.0m
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File Size |
351.39K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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