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Functional Block Diagram
rf Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Rev A6 010207
11-1
rf2510
Absolute Maximum Ratings Parameter
Supply Voltage Power Down Voltage (VPD) Operating Ambient Temperatu...
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Functional Block Diagram
rf Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 045...vhf/uhf transmitter designed for applications operating within the frequency range of 100MHz to 500M...
rf COMMUNICATIONS PRODUCTS
SA605 High performance low power mixer FM IF system
Product specification Replaces data of November 3, 1992 R...vhf/uhf receivers * SCA receivers * rf level meter * Spectrum analyzer * Instrumentation * FSK and A...
Description
From old datasheet system High performance low power mixer FM IF system
rf modulator
Preliminary specification File under Integrated Circuits, IC02 1997 Jan 08
Philips Semiconductors
Preliminary specificat...vhf band according to the application * One I2C-bus programmable output port * On-chip Phase-Locked ...
rf TWIN TRANSISTOR
PA831TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MIN...vhf band to uhf band.
FEATURES
* Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 G...
Description
2 CHANNEL, uhf BAND, Si, NPN, rf SMALL SIGNAL TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
...ass Marking hFE RH RH 50 to 100 rf rf 80 to 160 RE RE 125 to 250
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2
PT-Total Power Dissipation-W
FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE ...
Description
For amplify high frequency and low noise. NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
... 10 mA
Diode capacitance
CT rf
VR = 0 , f = 1 MHz
Differential forward resistance
IF = 5 mA
Forward current IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
200 mA
IF
160 140 120 100 80 60 40 20 0 0 20 40 6...
Description
Silicon Schottky Diode (For mixer applications in the vhf/uhf range For high speed switching) 硅肖特基二极管(搅拌机应用甚高频/超高频高速开关范围) From old datasheet system
... 10 mA
Diode capacitance
CT rf
VR = 1 V, f = 1 MHz
Differential forward resistance
IF = 5 mA
Forward current IF = f (TA*;TS) BAT 68W
200 mA
Forward current IF = f (TA*;TS) BAT 68-04W, -05W, -06W
200 mA
*): mounted on alu...
Description
Silicon Schottky Diodes (For mixer applications in the vhf/uhf range For high speed switching) SILICON, vhf-uhf BAND, MIXER DIODE From old datasheet system