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				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FDD6672A
OCR Text	...ed in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-sta...
Description	null30V N-Channel PowerTrench MOSFET
File Size	423.72K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FDR6580
OCR Text	...ed in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and a...
Description	N-Chennal 2.5V Specified PowerTrenchMOSFET N-Chennal 2.5V Specified PowerTrench MOSFET N-Chennal 2.5V Specified PowerTrench⑩ MOSFET
File Size	239.50K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS3670
OCR Text	...ed in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-sta...
Description	100V N-Channel PowerTrench⑩ MOSFET 100V N-Channel PowerTrench MOSFET
File Size	202.75K / 8 Page	View it Online	Download Datasheet

				Kingbright Corporation. KINGBRIGHT[Kingbright Corporation]
Part No.	L53EC L53ED L53HD L53ID L53IT L53YT L53GC L53GD L53GT L53NC L53ND L53NT L53PGC L53PGD L53PGT L53YC L53YD
OCR Text	...ht Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High Efficiency Red and Orange source color devices are mad...
Description	T-1 3/4(5mm) SOLID STATE LAMPS
File Size	199.99K / 7 Page	View it Online	Download Datasheet

				KINGBRIGHT[Kingbright Corporation] Kingbright Electronic
Part No.	L7104EC L7104ED L7104GC L7104GD L7104GT L7104ID L7104IT L7104YT L7104NC L7104ND L7104NT L7104PGC L7104PGD L7104PGT L7104YC L7104YD
OCR Text	...Orange source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The Yellow source color device...
Description	T-1 (3 mm) solid state lamp. High efficiency red. Lens type red transparent. T-1 (3mm)SOLID STATE LAMPS T-1 (3 mm) solid state lamp. Yellow. Lens type yellow diffused.
File Size	178.14K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PESD5V0V4UG PESD3V3V4UG PESDXV4UG
OCR Text	...3V3V4UG PESD5V0V4UG [1] * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak puls...
Description	VERY LOW CAPACITANCE QUADRUPLE ESD PROTECTION DIODE ARRAYS IN SOT353 PACKAGE
File Size	65.04K / 11 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	PESD5V0U1UT PESD15VU1UT PESD24VU1UT PESD3V3U1UT PESDXU1UT PESD12VU1UT
OCR Text	...15VU1UT PESD24VU1UT [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 9397 750 14912 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 0...
Description	From old datasheet system ULTRA LOW CAPACITANCE ESD PROTECTION DIODE IN SOT23 PACKAGE
File Size	93.49K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	PESD5V0S2BT
OCR Text	... number PESD5V0S2BT [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode Ppp Ipp Tj...
Description	LOW CAPACITANCE BI-DIRECTIONAL DOUBLE ESD PROTECTION DIODE IN SOT23 PACKAGE
File Size	64.44K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips Semiconductors
Part No.	PBSS303NX PBSS303NX115
OCR Text	...pe number PBSS303NX [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS303NX_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 -...
Description	30 V, 5.1 A NPN low VCEsat (BISS) transistor; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd 5100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
File Size	123.23K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PDTC123Y PDTC123YU PDTC123YE PDTC123YK PDTC123YM PDTC123YS PDTC123YT PDTC123YT215 PDTC123YM315 PDTC123YU115
OCR Text	...PDTC123YT PDTC123YU [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 9397 750 14017 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 0...
Description	NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT323 (SC-70); Container: Tape reel smd 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
File Size	70.32K / 11 Page	View it Online	Download Datasheet

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