heterojunction pdf Datasheet P8 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 2SK3800 DS1395S SB201 79L05 DS28E 12N10 ST735CD A115E
	Product Description
	Full Text Search

heterojunction Datasheet PDF File

For heterojunction Found Datasheets File :: 1084 Search Time::1.765ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC505LP4 HMC505LP4E
OCR Text	...LP4 & HMC505LP4E are GaAs InGaP heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 6.8 to 7.4 GHz, the VCO's phase noise performance is...
Description	MMIC VCO wl BUFFER AMPLIFIER / 6.8 - 7.4 GHz MMIC VCO wl BUFFER AMPLIFIER, 6.8 - 7.4 GHz
File Size	329.55K / 6 Page	View it Online	Download Datasheet

				Skyworks Solutions Inc.
Part No.	SKY74073
OCR Text	...d into the module. Two separate heterojunction Bipolar Transistor (HBT) Power Amplifier (PA) blocks are fabricated on a single Gallium Arsenide (GaAs) die to provide maximum performance with the smallest possible footprint. Optimized for li...
Description	Dual-Band SPR™ Module for GSM and GPRS Handset Applications SKY74073: Dual-Band SPR?/a> Module for GSM and GPRS Handset Applications SKY74073: Dual-Band SPR⑩ Module for GSM and GPRS Handset Applications SKY74073: Dual-Band SPR Module for GSM and GPRS Handset Applications
File Size	69.75K / 2 Page	View it Online	Download Datasheet

				ETC[ETC] http://
Part No.	SXA-3318B
OCR Text	heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from waf...
Description	400-2500兆赫平衡1 / 2瓦中功率GaAs HBT的功放音箱，有源偏置 400-2500 MHz Balanced 1/2 W Medium Power GaAs HBT Amplifier with Active Bias
File Size	812.77K / 8 Page	View it Online	Download Datasheet

				RF Micro Devices, Inc. RFMD[RF Micro Devices]
Part No.	RF2308PCBA RF2308 RF2307 RF2307PCBA
OCR Text	...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication prod...
Description	GENERAL PURPOSE AMPLIFIER 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
File Size	58.66K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers N.A. ETC[ETC] SIRENZA[SIRENZA MICRODEVICES]
Part No.	SGA-2486 SGA-2486Z
OCR Text	...cellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC...
Description	DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier
File Size	84.06K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	MAN6060 MAN6080 MAN8040 MAN3010A MAN3020A MAN3040A MAN30X0A MAN8010
OCR Text	heterojunction AlGaAs RED LOW CURRENT DISPLAYS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY ...
Description	DOUBLE heterojunction LOW CURRENT DISPLAYS DOUBLE heterojunction AlGaAs RED LOW CURRENT DISPLAYS 20mm (0.8in)
File Size	567.20K / 8 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
Part No.	MAX1959 MAX1958 MAX1958ETP MAX1959ETP
OCR Text	...n temperature sensor to power a heterojunction bipolar transistor (HBT) PA in W-CDMA and N-CDMA cell phones. The high-efficiency, pulse-width modulated (PWM), DCto-DC buck converter is optimized to provide a guaranteed output current of 800...
Description	W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs
File Size	792.48K / 24 Page	View it Online	Download Datasheet

				Microsemi, Corp. MICROSEMI[Microsemi Corporation]
Part No.	MWS11-PH22 MWS11-PH22-CS MWS11-2
OCR Text	...tured in an advanced InGaP/GaAs heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-powered digital equipment (dual-mode), spread spectrum systems, and ot...
Description	CMDA Power Amplifier 医师协会功率放大 WCDMA InGaP HBT Power Amplifier
File Size	109.82K / 5 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF2128
OCR Text	...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final st...
Description	IC,RF AMPLIFIER,GAAS,SOP,8PIN,PLASTIC
File Size	49.57K / 4 Page	View it Online	Download Datasheet

				RF Micro Devices, Inc. RFMD[RF Micro Devices]
Part No.	RF2161 RF2161PCBA
OCR Text	...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 and W-CDMA handsets, spread spectrum systems, and other applications in the 1920MHz to ...
Description	3V W-CDMA POWER 1900MHZ 3V LINEAR POWER AMPLIFIER
File Size	149.99K / 8 Page	View it Online	Download Datasheet

For heterojunction Found Datasheets File :: 1084 Search Time::1.765ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |