...n time Storage time Fall time
*h
(TC=25C)
Symbol ICBO IEBO vCEO hFE1 hFE2* vCE(sat) vBE(sat) fT ton tstg tf IC = -2A, IB1 = - 0.2A, IB2...v v Mhz s s s min typ max -10 -50 Unit A A v
FE2
Rank classification
Q 90 to 180 P 130 to 260...
Description
Silicon PNP epitaxial planar type(For power switching)
...n time Storage time Fall time
*h
(TC=25C)
Symbol ICBO IEBO vCEO hFE1 hFE2* vCE(sat) vBE(sat) fT ton tstg tf IC = -3A, IB1 = - 0.3A, IB2...v v Mhz s s s min typ max -10 -50 Unit A A v
FE2
Rank classification
Q 90 to 180 P 130 to 260...
...n time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
3.0-0.2
+0.4
+0
1
Power T...v)
-10
vCE(sat) -- IC
IC/IB=30
Collector power dissipation PC (W)
(1) 30
Collector cur...
...n time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
3.0-0.2
+0.4
+0
1
Power T...v)
-10
vCE(sat) -- IC
IC/IB=30
Collector power dissipation PC (W)
Collector current IC (A...
...n time Storage time Fall time
*h FE2
v v Mhz s s s
Rank classification
Q P 2000 to 5000 4000 to 10000
Internal Connection
B
Rank hFE2
E
1
Power Transistors
PC -- Ta
50 -5 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat ...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...n time Storage time Fall time
*h FE2
v v Mhz s s s
Rank classification
Q P 2000 to 5000 4000 to 10000
Internal Connection
B
Rank hFE2
E
1
Power Transistors
PC -- Ta
50 -6 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat ...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...n time Storage time Fall time
*h FE1
v v Mhz s s s
Rank classification
Q P 2000 to 5000 4000 to 10000
Internal Connection
B
Rank hFE1
E
14.70.5
+0.4
+0
1
Power Transistors
PC -- Ta
50 -8 (1) 40 (1) TC=Ta (...
... voltage Transition frequency
*h FE1
v v Mhz
Rank classification
Q 60 to 140 P 100 to 240
Rank hFE1
1
Power Transistors
PC -- Ta
50 -600 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat s...
Description
Silicon PNP epitaxial planar type(For power amplification)
...n time Storage time Fall time
*h FE1
Rank classification
Q 70 to 150 P 120 to 250 Note: Ordering can be made by the common rank (PQ ran...v)
Base to emitter voltage vBE (v)
vCE(sat) -- IC
Collector to emitter saturation voltage vCE...
Description
Silicon PNP epitaxial planar type power transistor Silicon PNP epitaxial planar type(For low-frequency power amplification) 3 A, 80 v, PNP, Si, POWER TRANSISTOR 3 A, 60 v, PNP, Si, POWER TRANSISTOR
...n time Storage time Fall time
*h FE1
Rank classification
Q 70 to 150 P 120 to 250 Note: Ordering can be made by the common rank (PQ ran...v)
Base to emitter voltage vBE (v)
vCE(sat) -- IC
Collector to emitter saturation voltage vCE...
Description
Silicon PNP epitaxial planar type(For low-frequency power amplification)