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    2SA2084

PANASONIC[Panasonic Semiconductor]
Part No. 2Sa2084
OCR Text ...at) Cob fT Conditions IC = -100 a, IB = 0 IE = -1 a, , IC = 0 vCE = -10 v, IC = -5 ma IC = -10 ma, IB = -1 ma vCB = -10 v, IE = 0, f = 1 MHz vCB = -10 v, IE = 10 ma, f = 200 MHz 7 50 Min -300 -5 30 150 - 0.6 Typ Max Unit v v v pF MHz No...
Description Silicon PNP epitaxial planar type

File Size 67.26K  /  3 Page

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    2SA2087

ROHM[Rohm]
Part No. 2Sa2087
OCR Text ...4 1.0 150 -55 to 150 Unit v v v a a W C C 1 2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 1 Pw=10ms 2 Each terminal mounted...
Description Power transistor

File Size 81.04K  /  4 Page

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    2SA2088

ROHM[Rohm]
Part No. 2Sa2088
OCR Text ...0 200 150 -55 to 150 Unit v v v a a mW C C 1 2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 1 Pw=10ms 2 Each terminal mounte...
Description Medium power transistor ( 60v/0.5a)
Medium power transistor (−60v, −0.5a)
Medium power transistor (-60v, -0.5a)

File Size 81.84K  /  4 Page

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    2SA2091S 2SA2091STPQ

TE Connectivity, Ltd.
ROHM[Rohm]
Part No. 2Sa2091S 2Sa2091STPQ
OCR Text ...0 300 150 -55 to 150 Unit v v v a a mW C C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Pw=100ms Pulsed Tj Tstg 1...
Description 1000 ma, 60 v, PNP, Si, SMaLL SIGNaL TRaNSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60v/ 1a)
Medium power transistor (−60v, −1a)
Medium power transistor (-60v, -1a)

File Size 81.85K  /  4 Page

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    2SA2093

ROHM[Rohm]
Part No. 2Sa2093
OCR Text ...0 1.0 150 -55 to 150 Unit v v v a a W C C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Pw=10ms Pulsed Tj Tstg 1/3...
Description Power transistor ( 60v/2a)
Power transistor (−60v, −2a)
Power transistor (-60v, -2a)

File Size 81.67K  /  4 Page

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    2SA2097

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2Sa2097
OCR Text ...in: hFE = 200 to 500 (IC = -0.5 a) Low collector-emitter saturation: vCE (sat) = -0.27 v (max) High-speed switching: tf = 55 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage ...
Description High-Speed Swtching applications DC-DC Converter applications

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    2SA2113

ROHM[Rohm]
Part No. 2Sa2113
OCR Text ...10ms 2 Each terminal mounted on a recommended land Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Limits -30 -30 -6 -2 -4 500 150 -55~+150 Unit v v v a a 1 mW 2 C C 0 0.7 1/3 2Sa2113 Tr...
Description Medium power transistor ( 30v/2a)
Medium power transistor (−30v, −2a)
Medium power transistor (-30v, -2a)

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    2SA473

Wing Shing Computer Components
Part No. 2Sa473
OCR Text ...-5 -3 10 150 -50~150 Unit v v v a W ELECTRICaL CHaRaCTERISTICS (Ta=25) Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation voltage Current Gain Bandwidth Product Symbol ICBO I...
Description PNP EPITaXIaL SILICON TRaNSISTOR(LOW FREQUENCY POWER aMPLIFIER)

File Size 68.34K  /  1 Page

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    2SA608 2SA608N 2SC536N

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2Sa608 2Sa608N 2SC536N
OCR Text ...typ max (-)0.1 (-)0.1 560* Unit a a Continued on next page. * The 2Sa608N/2SC536N are classified by 1ma hFE as follow Rank hFE F 160 to ...v v v v v v(BR)CBO IC=(-)10a, IE=0 v(BR)CEO IC=(-)1ma, RBE= v(BR)EBO IE=(-)10a, IC=0 --16 I...
Description    Low-Frequency General-Purpose amplifier applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose amplifier applications
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose amplifier applications

File Size 39.56K  /  4 Page

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    2SA673A 2SA673AK 2SA673A_K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2Sa673a 2Sa673aK 2Sa673a_K
OCR Text ... 0.4 150 -55 to +150 Unit v v v a W C C 2 2Sa673a(K) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol v(BR)CBO Min -50 -50 -4 -- -- -- -- -- 60 10 -- -- -- -- Typ -- -- -- -- -- -0.64 -0.2 -0.87 ...
Description Silicon PNP Epitaxial

File Size 35.43K  /  8 Page

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