...at) Cob fT Conditions IC = -100 a, IB = 0 IE = -1 a, , IC = 0 vCE = -10 v, IC = -5 ma IC = -10 ma, IB = -1 ma vCB = -10 v, IE = 0, f = 1 MHz vCB = -10 v, IE = 10 ma, f = 200 MHz 7 50 Min -300 -5 30 150 - 0.6 Typ Max Unit v v v pF MHz
No...
...4 1.0 150 -55 to 150 Unit v v v a a W C C
1 2
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
1 Pw=10ms 2 Each terminal mounted...
...0 200 150 -55 to 150 Unit v v v a a mW C C
1 2
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
1 Pw=10ms 2 Each terminal mounte...
Description
Medium power transistor ( 60v/0.5a) Medium power transistor (−60v, −0.5a) Medium power transistor (-60v, -0.5a)
...0 300 150 -55 to 150 Unit v v v a a mW C C
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
Pw=100ms
Pulsed
Tj
Tstg
1...
Description
1000 ma, 60 v, PNP, Si, SMaLL SIGNaL TRaNSISTOR SPT, SC-72, 3 PIN Medium power transistor (60v/ 1a) Medium power transistor (−60v, −1a) Medium power transistor (-60v, -1a)
...0 1.0 150 -55 to 150 Unit v v v a a W C C
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
Pw=10ms
Pulsed
Tj
Tstg
1/3...
Description
Power transistor ( 60v/2a) Power transistor (−60v, −2a) Power transistor (-60v, -2a)
...10ms 2 Each terminal mounted on a recommended land
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Limits -30 -30 -6 -2 -4 500 150 -55~+150
Unit v v v a a 1 mW 2 C C
0
0.7
1/3
2Sa2113
Tr...
Description
Medium power transistor ( 30v/2a) Medium power transistor (−30v, −2a) Medium power transistor (-30v, -2a)
...-5 -3 10 150 -50~150 Unit v v v a W
ELECTRICaL CHaRaCTERISTICS (Ta=25)
Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation voltage Current Gain Bandwidth Product Symbol ICBO I...
Description
PNP EPITaXIaL SILICON TRaNSISTOR(LOW FREQUENCY POWER aMPLIFIER)
...typ max (-)0.1 (-)0.1 560* Unit a a
Continued on next page. * The 2Sa608N/2SC536N are classified by 1ma hFE as follow
Rank hFE F 160 to ...v v v v v
v(BR)CBO IC=(-)10a, IE=0 v(BR)CEO IC=(-)1ma, RBE= v(BR)EBO IE=(-)10a, IC=0
--16
I...
... 0.4 150 -55 to +150 Unit v v v a W C C
2
2Sa673a(K)
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol v(BR)CBO Min -50 -50 -4 -- -- -- -- -- 60 10 -- -- -- -- Typ -- -- -- -- -- -0.64 -0.2 -0.87 ...