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  900v.2 Datasheet PDF File

For 900v.2 Found Datasheets File :: 1622    Search Time::1.469ms    
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    Dynex Semiconductor, Ltd.
Part No. DFM600BXS17-A000
OCR Text ...z iec1287. v 1 = 1200v, v 2 = 900v, 50hz rms max. 1700 600 1200 3674 67.5 2.0 4 10 test conditions continuous dissipation - junction to case mounting torque 5nm (with mounting grease) - - mounting - m6 electrical connections - m6 paramete...
Description 600 A, 1700 V, SILICON, RECTIFIER DIODE B, 2 PIN

File Size 117.82K  /  7 Page

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    DIM100WHS17-E000

Dynex Semiconductor
Part No. DIM100WHS17-E000
OCR Text ... 1mhz - - t j = 125?c, v cc = 900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward cur...
Description IGBT Power Module

File Size 341.43K  /  8 Page

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    DIM100WHS17-A000

Dynex Semiconductor
Part No. DIM100WHS17-A000
OCR Text ...c = 100a v ge = 15v v ce = 900v r g(on) = r g(off) = 10 ? l ~ 100nh i f = 100a, v r = 900v, di f /dt = 1500a/ s parameter turn-off...2 2.5 3 3.5 4 4.5 5 collector-emitter voltage, v ce - (v) collector current, i c - (a) common emi...
Description IGBT Power Module

File Size 321.80K  /  8 Page

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    BSM200GA170DLC

eupec GmbH
Part No. BSM200GA170DLC
OCR Text ...ind. last) i c = 200a, v ce = 900v turn on delay time (inductive load) v ge = 15v, r g = 7,5 w , t vj = 25c t d,on - 0,1 - s v ge ...2,1 2,5 v forward voltage i f = 200a, v ge = 0v, t vj = 125c - 2,1 2,5 v rckstromspitze i f = 20...
Description IGBT-Modules

File Size 108.27K  /  9 Page

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    Advanced Power Technology Ltd.
Part No. APTDF400KK170
OCR Text ...ry current i f = 400a v r = 900v di/dt = 4000a/s t j = 125c 400 a thermal and package characteristics symbol characteristic...2 3.5 n.m wt package weight 280 g package outline (dimensions in mm) ap...
Description Dual Common Cathode diodes Power Module

File Size 229.68K  /  3 Page

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