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  8-bit 4m Datasheet PDF File

For 8-bit 4m Found Datasheets File :: 3274    Search Time::1.578ms    
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    TS634 TS634D TS634ID

STMICROELECTRONICS[STMicroelectronics]
Part No. TS634 TS634D TS634ID
OCR Text ...ONS (top view) 1 2 3 4 5 6 7 8 9 10 20 Vcc+ 1 Output 1 VccVcc Vcc Vcc Vcc GND Inverting input 1 Non-inverting input 1 Vcc Vcc V...bit Gain Control 2/9 TS634 ELECTRICAL CHARACTERISTICS VCC = 6Volts, Tamb = 25C (unless otherw...
Description DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

File Size 124.87K  /  9 Page

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    EDS1232AATA-60 EDS1232AATA-60L EDS1232AAT EDS1232AATA-75L EDS1232AATA-75 EDS1232AATA EDS1232AABB EDS1232AABB-60-E EDS123

ELPIDA[Elpida Memory]
Part No. EDS1232AATA-60 EDS1232AATA-60L EDS1232AAT EDS1232AATA-75L EDS1232AATA-75 EDS1232AATA EDS1232AABB EDS1232AABB-60-E EDS1232AABB-60L-E EDS1232AABB-75-E EDS1232AABB-75L-E
OCR Text ...ble burst length (BL): 1, 2, 4, 8 and full page * 2 variations of burst sequence Sequential (BL = 1, 2, 4, 8) Interleave (BL = 1, 2, 4, 8)...Bit Organization 32: x32 Voltage, Interface A: 3.3V, LVTTL Die Rev. Power Consumption Blank: Norm...
Description 128M bits SDRAM

File Size 551.11K  /  55 Page

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    K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 K3S7V2000M-TC K3S7V2000M-TC10 K3S7V2000M-TC12

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 K3S7V2000M-TC K3S7V2000M-TC10 K3S7V2000M-TC12
OCR Text ...ncy(3 ~ 6) -. Burst Length : 4, 8 -. Burst Type : Sequential & Interleaved * DQM for data-out masking * Package :86TSOP2 - 400 Synch. MROM GENERAL DESCRIPTION The K3S7V2000M-TC is a synchronous high bandwidth mask programmable ROM fabr...
Description 2M x 32 Synchronous MASKROM Data Sheet
64m-Bit (4mx16 /2Mx32) Synchronous MASKROM

File Size 1,077.97K  /  27 Page

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    K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text ...lock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going e...bit prefetch Sense AMP Refresh Counter Row Buffer Row Decoder 4mx16 4mx16 4mx16 32 16 x16 DQi...
Description 256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存

File Size 204.60K  /  16 Page

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    MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80PFTN MBM29DL321TD-80PFTR MBM29DL322TD-80 MBM29DL322TD-80PBT MBM29DL322

FUJITSU[Fujitsu Media Devices Limited]
Part No. MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80PFTN MBM29DL321TD-80PFTR MBM29DL322TD-80 MBM29DL322TD-80PBT MBM29DL322TD-80PFTN MBM29DL322TD-80PFTR MBM29DL323TD-80 MBM29DL323TD-80PBT MBM29DL323TD-80PFTN MBM29DL323TD-80PFTR MBM29DL324TD-80 MBM29DL324TD-80PBT MBM29DL324TD-80PFTN MBM29DL324TD-80PFTR MBM29DL321TD-12 MBM29DL322TD-12 MBM29DL323TD-12 MBM29DL324TD-12 MBM29DL322BD MBM29DL322BD-12 MBM29DL322BD-80 MBM29DL322BD-80PBT MBM29DL322BD-80PFTN MBM29DL322BD-80PFTR MBM29DL322BD-90 MBM29DL324BD-90 MBM29DL322TD-90 MBM29DL323TD MBM29DL323TD-90 MBM29DL32XTD MBM29DL321BD MBM29DL321BD-12 MBM29DL321BD-80 MBM29DL321BD-80PBT MBM29DL321BD-80PFTN MBM29DL321BD-80PFTR MBM29DL321BD-90 MBM29DL321TD MBM29DL321TD-90 MBM29DL322TD MBM29DL323BD MBM29DL323BD-12 MBM29DL323BD-80 MBM29DL323BD-80PBT MBM29DL323BD-80PFTN MBM29DL323BD-80PFTR MBM29DL323BD-90 MBM29DL324BD MBM29DL324BD-12 MBM29DL324BD-80 MBM29DL324BD-80PBT MBM29DL324BD-80PFTN MBM29DL324BD-80PFTR MBM29DL324TD MBM29DL324TD-90 MBM29DL32XBD
OCR Text 8/2M x 16) BIT Dual Operation MBM29DL32XTD/BD s FEATURES -80/90/12 * 0.33 m Process Technology * Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system...
Description 32M (4m X 8/2M X 16) BIT Dual Operation

File Size 408.60K  /  84 Page

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    AT25F4096 AT25F4096W-10SU-2.7

ATMEL[ATMEL Corporation]
Part No. AT25F4096 AT25F4096W-10SU-2.7
OCR Text ...or Write Protection - Protect 1/8, 1/4, 1/2 or Entire Array Write Protect (WP) Pin and Write Disable Instructions for both Hardware and Soft...Bit (MSB) is the first bit transmitted and received. SERIAL OP-CODE: After the device is selected wi...
Description SPI SERIAL MEMORY 4m

File Size 280.82K  /  17 Page

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    HM628511HC HM628511HCJP-10 HM628511HCLJP-10

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM628511HC HM628511HCJP-10 HM628511HCLJP-10
OCR Text 8-bit) ADE-203-1197 (Z) Preliminary Rev. 0.0 Nov. 9, 2000 Description The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word x 8-bit. It has realized high speed access time by employing CMOS process (6-transistor m...
Description    4m High Speed SRAM (512-kword x 8-bit)
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位)
4m High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位)

File Size 66.38K  /  14 Page

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    HM628511HI HM628511HJPI-12 HM628511HJPI-15

HITACHI[Hitachi Semiconductor]
Part No. HM628511HI HM628511HJPI-12 HM628511HJPI-15
OCR Text 8-bit) ADE-203-1035A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word x 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly re...
Description 4m High Speed SRAM (512-kword x 8-bit)

File Size 62.69K  /  13 Page

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    HM628511H HM628511HJP-10 HM628511HJP-12 HM628511HJP-15 HM628511HLJP-10 HM628511HLJP-12 HM628511HLJP-15

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. HM628511H HM628511HJP-10 HM628511HJP-12 HM628511HJP-15 HM628511HLJP-10 HM628511HLJP-12 HM628511HLJP-15
OCR Text 8-bit) ADE-203-762D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word x 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resi...
Description 4m High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位)

File Size 68.50K  /  13 Page

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    LH28F004SU-Z1

SHARP[Sharp Electrionic Components]
Part No. LH28F004SU-Z1
OCR Text 8) Flash Memory TOP VIEW * 512K x 8 Word Configuration * 5 V Write/Erase Operation (5 V VPP) - No Requirement for DC/DC Converter to Wr...bit Systems * Erase All Unlocked Blocks Writing of memory data is performed typically within 13 s. A...
Description 4m (512K 】 8) Flash Memory
4m (512K 8) Flash Memory

File Size 179.96K  /  32 Page

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