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Fuji Semiconductors
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| Part No. |
2SK3728-01MR
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| OCR Text |
...AR *2 2.2 EAS *1 127.2 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25C 2.16 Tc=25C 26 Tch +150 -55 to +150 Tstg VISO *6 2000 Unit V V A A V A mJ kV/s kV/...720V VGS=0V VGS=30V VDS=0V ID=1.1A VGS=10V ID=1.1A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=1.1A VG... |
| Description |
Power MOSFET
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| File Size |
161.86K /
4 Page |
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International Rectifier
IRF
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| Part No. |
IRGPF50F
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| OCR Text |
...--V IC = 51A See Fig. 2, 5 ---2.4 ---IC = 28A, T J = 150C 3.0 ---5.5 VCE = VGE, IC = 250A ---- -9.7 ---- mV/C VCE = VGE, IC = 250A 12 18 ---...720V 280 VGE = 15V, R G = 5.0 180 Energy losses include "tail" ------mJ See Fig. 9, 10, 11, 14 4.1 -... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A)
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| File Size |
225.38K /
6 Page |
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STMICROELECTRONICS
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| Part No. |
STW6NC90Z
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| OCR Text |
...e v dd = 450v, i d = 2.5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 24 ns t r rise time 8 ns q g total gate charge v dd = 720v, i d =5a, v gs = 10v 40 56 nc q gs gate-source charge 9 nc q gd gate-drain charge 15 nc symbol paramete... |
| Description |
5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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| File Size |
89.43K /
8 Page |
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SGS Thomson Microelectronics
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| Part No. |
STP6NC90Z STP6NC90ZFP
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| OCR Text |
...i d stp6nc90z/fp 900v < 1.9 w 5.4 a stb6nc90z-1 900v < 1.9 w 5.4 a symbol parameter value unit stp(b)6nc90z(-1) stp6nc90zfp v ds drain-sourc...720v, i d = 6a, v gs = 10v 42 58.8 nc q gs gate-source charge 13 nc q gd gate-drain charge 15 nc sym... |
| Description |
N-CHANNEL 900V 1.55 OHM 5.4A TO-220/TO-200FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
105.37K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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