340.00 pdf Datasheet P8 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : CRS0806 150N17 100391QC TQ045 LA5734MP PIC16 D2415 CENB1060
	Product Description
	Full Text Search

340.00 Datasheet PDF File

For 340.00 Found Datasheets File :: 7293 Search Time::4.641ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				ADPOW[Advanced Power Technology]
Part No.	APT5026HVR
OCR Text	...17.39 (.685) 8.89 (.350) 8.63 (.340) 4.19 (.165) 3.94 (.155) 21.21 (.835) 20.70 (.815) 13.84 (.545) 13.58 (.535) 17.96 (.707) 17.70 (.697) Drain 19.05 (0.750) 12.70 (0.500) Source Gate 3.56 (.140) BSC 6.86 (.270) 6.09 (.240) ...
Description	POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.64K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030B2VR
OCR Text	...IN TYP MAX UNIT 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge Gate-Drain ("Mi...00 5 0 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs C...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.13K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVFR
OCR Text	...TYP MAX UNIT pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Mille...00 5 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CAS...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVR
OCR Text	...IN TYP MAX UNIT 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge Gate-Drain ("Mi...00 5 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CAS...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	67.66K / 4 Page	View it Online	Download Datasheet

				Microsemi Corporation ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8030LVFR APT8030LVFRG
OCR Text	...TYP MAX UNIT pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Mille...00 5 0 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs C...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	62.47K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030LVR
OCR Text	...IN TYP MAX UNIT 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge Gate-Drain ("Mi...00 5 0 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs C...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030 APT8030B2VFR
OCR Text	...TYP MAX UNIT pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Mille...00 5 0 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs C...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 27A 0.300 Ohm
File Size	60.47K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8058HVR
OCR Text	...17.39 (.685) 8.89 (.350) 8.63 (.340) 4.19 (.165) 3.94 (.155) 21.21 (.835) 20.70 (.815) 13.84 (.545) 13.58 (.535) 17.96 (.707) 17.70 (.697) Drain 19.05 (0.750) 12.70 (0.500) Source Gate 3.56 (.140) BSC 6.86 (.270) 6.09 (.240) ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
File Size	60.35K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...17.39 (.685) 8.89 (.350) 8.63 (.340) 4.19 (.165) 3.94 (.155) 21.21 (.835) 20.70 (.815) 13.84 (.545) 13.58 (.535) 17.96 (.707) 17.70 (.697) Drain 19.05 (0.750) 12.70 (0.500) Source Gate 3.56 (.140) BSC 6.86 (.270) 6.09 (.240) ...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text	...4.698 156 1.0 0.888 -55 12.75 4.340 134 1.5 0.819 -80 11.91 3.938 115 2.0 0.756 -104 11.00 3.547 97 2.5 0.704 -127 10.07 3.186 80 3.0 0.662 -149 9.07 2.840 65 3.5 0.638 -170 8.07 2.532 50 4.0 0.633 171 7.07 2.257 37 4.5 0.643 153 6.07 2.012...
Description	0.5-6 GHz General Purpose Gallium Arsenide FET
File Size	67.13K / 8 Page	View it Online	Download Datasheet

For 340.00 Found Datasheets File :: 7293 Search Time::4.641ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |