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PanJit International, Inc.
FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FSPJ160F3 FSPJ160D1 FSPJ160F4
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| OCR Text |
...labs or texas a&m. 5. fluence = 1e5 ions/cm 2 (typ), t = 25 o c. 6. ion species: let = 37, br or kr ; let = 60, i or xe; let = 82, au. 7. does not exhibit single event burnout (s eb) or single event gate rupture (segr). performance curves ... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | TO-254AA 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 70A条（丁）|54AA
70 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
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| File Size |
104.56K /
7 Page |
 View
it Online |
Download Datasheet
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SMSC, Corp.
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| Part No. |
FSGL234R3
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| OCR Text |
...ven national labs. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. does not exhibit single event burnout (seb) or single event gate rupture (segr). performance curves unless otherwise specified figure 1. single event effects safe oper... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 7A条（丁）|05AF
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| File Size |
89.10K /
7 Page |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FSPS130D1 FSPS130F3 FSPS130R3 FSPS130R4
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| OCR Text |
...labs or texas a&m. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. ion species: let = 37, br or kr ; let = 60, i or xe; let = 82, au. 7. does not exhibit single event burnout (s eb) or single event gate rupture (segr). performance cur... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-257AA
16 A, 100 V, 0.049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
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| File Size |
120.85K /
7 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V... |
| Description |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
45.44K /
8 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 FSPL230R FSPL230R3
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| OCR Text |
...ven National Labs. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 37 60 60 82 82 TYPICAL RANGE () 36 36 32 32 28 28 APPLIED VGS B... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
80.46K /
8 Page |
View
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Download Datasheet |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 FSPYC260F3 FSPYC260R FSPYC260R3
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| OCR Text |
...ven National Labs. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 37 60 60 82 82 TYPICAL RANGE () 36 36 32 32 28 28 APPLIED VGS B... |
| Description |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
82.56K /
8 Page |
View
it Online |
Download Datasheet |
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