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				Renesas Electronics Corporation
Part No.	FS30VSJ-3 FS30VSJ-3-A1 FS30VSJ-3-T11
OCR Text	... to +150 1.2 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FS30VSJ-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltag...
Description	High-Speed Switching Use Nch Power MOS FET
File Size	166.68K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... Mitsubishi Electric Semiconductor
Part No.	FS50SMJ-3
OCR Text	...4.4 G 0.6 2.8 1.0 q 5.45 w e 5.45 4 wr 4V DRIVE VDSS .............................................................................3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description	HIGH-SPEED SwITCHING USE
File Size	40.87K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semiconductors
Part No.	FS50SM-3
OCR Text	......................... 2000V w q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid cont...3 2 102 7 5 3 2 101 7 5 3 2 1ms 10ms 100ms TC = 25C Single Pulse DC tw = 10ms 40 30 100ms ...
Description	Nch POwER MOSFET HIGH-SPEED SwITCHING USE
File Size	47.65K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	FS50SM-3
OCR Text	...5 4.5 0.2 123 2.6 0.2 w 4V DRIVE VDSS ................................................................................. 30V rDS...3 2 102 7 5 3 2 101 7 5 3 2 tw = 10ms 40 30 100ms 1ms 10ms TC = 25C Single Pulse DC 20 ...
Description	HIGH-SPEED SwITCHING USE
File Size	41.15K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS10ASJ-3 FS10ASJ-3-T13
OCR Text	...to +150 0.32 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FS10ASJ-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltag...
Description	High-Speed Switching Use Nch Power MOS FET
File Size	165.61K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS5AS-3-T13
OCR Text	...to +150 0.32 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS5AS-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-...
Description	High-Speed Switching Use Nch Power MOS FET
File Size	196.54K / 7 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
Part No.	FS5AS-3
OCR Text	...X. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e 10V DRIVE VDSS ................................................................................ 150V rDS (ON) (MAX) .............................................
Description	Nch POwER MOSFET HIGH-SPEED SwITCHING USE 5 A, 150 V, 0.38 ohm, N-CHANNEL, Si, POwER, MOSFET
File Size	41.55K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Powerex Power Semiconductors
Part No.	FS50VS-3
OCR Text	............. 130ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC con...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description	MITSUBISHI Nch POwER MOSFET HIGH-SPEED SwITCHING USE
File Size	43.12K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	FS5VSH-3
OCR Text	...c converter, etc. v v a a a a a w c c g 150 10 5 20 5 5 20 30 C55 ~ +150 C55 ~ +150 1.2 v gs = 0v v ds = 0v l = 100 m h typical value d...3 1.5max. qwe r 4.5 0 +0.3 ? 3.0 +0.3 ?.5 1 5 0.8 8.6 0.3 9.8 0.5 1.5max. (1.5) 0.5...
Description	MITSUBISHI Nch POwER MOSFET HIGH-SPEED SwITCHING USE
File Size	46.19K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS50SMJ-3 FS50SMJ-3-A8
OCR Text	... to +150 4.8 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.3.00 Nov 21, 2006 page 1 of 6 FS50SMJ-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown volta...
Description	High-Speed Switching Use Nch Power MOS FET High-Speed Switching Use Nch Power MOS FET
File Size	190.08K / 7 Page	View it Online	Download Datasheet

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