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  trench- Datasheet PDF File

For trench- Found Datasheets File :: 7512    Search Time::1.703ms    
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    FDMC4435BZ

Fairchild Semiconductor
Part No. FDMC4435BZ
OCR Text Trench(R) MOSFET February 2008 FDMC4435BZ P-Channel Power Trench MOSFET -30V, -18A, 20.0m Features Max rDS(on) = 20.0m at VGS = -10V, ID = -8.5A Max rDS(on) = 37.0m at VGS = -4.5V, ID = -6.3A Extended VGSS range (-25V) for battery...
Description P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ

File Size 327.28K  /  7 Page

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    FDD5810 FDD581007 FDD5810-F085

Fairchild Semiconductor
Part No. FDD5810 FDD581007 FDD5810-F085
OCR Text Trench(R) MOSFET October 2007 FDD5810 N-Channel Logic Level Trench(R) MOSFET 60V, 36A, 27m Features RDS(ON) = 22m (Typ.), VGS = 5V, ID = 29A Qg(5) = 13nC (Typ.), VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single P...
Description N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm
N-Channel Logic Level Trench㈢ MOSFET
N-Channel Logic Level Trench? MOSFET

File Size 259.88K  /  7 Page

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    FDD5353

Fairchild Semiconductor, Corp.
Part No. FDD5353
OCR Text Trench(R) MOSFET March 2008 FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3m Features Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A 100% UIL Tested RoHS Compliant (R) tm Ge...
Description 60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape &amp; Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ

File Size 281.26K  /  6 Page

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    PMPB27EP

NXP Semiconductors
Part No. PMPB27EP
OCR Text trench mosfet 10 september 2012 product data sheet scan or click this qr code to view the latest information for this product 1. product profile 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a leadless ...
Description 30 V, single P-channel Trench MOSFET

File Size 246.29K  /  14 Page

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    FGA70N30TD

Fairchild Semiconductor
Part No. FGA70N30TD
OCR Text Trench IGBT December 2007 FGA70N30TD 300V, 70A PDP IGBT Features * High current capability * Low saturation voltage: VCE(sat) =1.5V @ IC = 40A * High input impedance * Fast switching * RoHS complaint tm General Description Us...
Description 300V, 70A PDP IGBT

File Size 593.32K  /  9 Page

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    FGA25N120FTD

Fairchild Semiconductor
Part No. FGA25N120FTD
OCR Text Trench IGBT April 2008 FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Features * Field stop trench technology * High speed switching * Low saturation voltage: VCE(sat) =1.6V @ IC = 25A * High input impedance * RoHS complaint tm ...
Description 1200V, 25A Field Stop Trench IGBT

File Size 695.07K  /  9 Page

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    SEMIX302GAL12E4S

Semikron International
Part No. SEMIX302GAL12E4S
OCR Text ...0 900 -20 ... 20 SEMiX(R)2s Trench IGBT Modules Tj = 150 C 10 -40 ... 175 Tj = 175 C Tc = 25 C Tc = 80 C 356 266 300 900 1620 -40 ... 175 IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) ...
Description Trench IGBT Modules

File Size 131.45K  /  5 Page

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    SEMIX302GAR12E4S

Semikron International
Part No. SEMIX302GAR12E4S
OCR Text ...0 900 -20 ... 20 SEMiX(R)2s Trench IGBT Modules Tj = 150 C 10 -40 ... 175 Tj = 175 C Tc = 25 C Tc = 80 C 356 266 300 900 1620 -40 ... 175 IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) ...
Description Trench IGBT Modules

File Size 131.41K  /  5 Page

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    SEMIX302GB066HDS08

Semikron International
Part No. SEMIX302GB066HDS08
OCR Text ... Values Unit SEMiX(R)2s Trench IGBT Modules SEMiX302GB066HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positi...
Description Trench IGBT Modules

File Size 135.55K  /  5 Page

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    SEMIX302GB126HDS08

Semikron International
Part No. SEMIX302GB126HDS08
OCR Text ... Values Unit SEMiX(R)2s Trench IGBT Modules SEMiX302GB126HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positi...
Description Trench IGBT Modules

File Size 135.55K  /  5 Page

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