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    MRF134

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF134
OCR Text ...ource Power Gain (VDD = 28 Vdc, pout = 5.0 W, IDQ = 50 mA) f = 150 MHz (Fig. 1) f = 400 MHz (Fig. 14) Drain Efficiency (Fig. 1) (VDD = 28 Vdc, pout = 5.0 W, f = 150 MHz, IDQ = 50 mA) Electrical Ruggedness (Fig. 1) (VDD = 28 Vdc, pout = 5.0 ...
Description N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

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    MRF136Y

MACOM[Tyco Electronics]
Part No. MRF136Y
OCR Text ... Gain (Figure 1) (VDD = 28 Vdc, pout = 30 W, f = 150 MHz, IDQ = 100 mA) Drain Efficiency (Figure 1) (VDD = 28 Vdc, pout = 30 W, f = 150 MHz, IDQ = 100 mA) Electrical Ruggedness (Figure 1) (VDD = 28 Vdc, pout = 30 W, f = 150 MHz, IDQ = 100 m...
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL MOS BROADBAND RF POWER FET

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    MRF136

MOTOROLA[Motorola, Inc]
Part No. MRF136
OCR Text ...Figure 1) MRF136 (VDD = 28 Vdc, pout = 15 W, f = 150 MHz, IDQ = 25 mA) Common Source Power Gain (Figure 2) MRF136Y (VDD = 28 Vdc, pout = 30 W, f = 150 MHz, IDQ = 100 mA) Drain Efficiency (Figure 1) MRF136 (VDD = 28 Vdc, pout = 15 W, f = 150...
Description N-CHANNEL MOS BROADBAND RF POWER FETs

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    MRF137

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF137
OCR Text ...ource Power Gain (VDD = 28 Vdc, pout = 30 W, IDQ = 25 mA) f = 150 MHz (Figure 1) f = 400 MHz (Figure 14) No Degradation in Output Power NF Gps 13 -- 50 16 7.7 60 -- -- -- % -- 1.5 -- dB dB Drain Efficiency (Figure 1) (VDD = 28 Vdc, Pou...
Description N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

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    MRF140

MOTOROLA[Motorola, Inc]
Part No. MRF140
OCR Text ...plifier Power Gain (VDD = 28 V, pout = 150 W (PEP), IDQ = 250 mA) (30 MHz) (150 MHz) Gps -- -- -- 15 6.0 40 -- -- -- dB % Drain Efficiency (VDD = 28 V, pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 6.5 A) Intermodulation Distortion...
Description N-CHANNEL MOS LINEAR RF POWER FET

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    MRF141G

MOTOROLA[Motorola, Inc]
Part No. MRF141G
OCR Text ...plifier Power Gain (VDD = 28 V, pout = 300 W, IDQ = 500 mA, f = 175 MHz) Drain Efficiency (VDD = 28 V, pout = 300 W, f = 175 MHz, ID (Max) = 21.4 A) Load Mismatch (VDD = 28 V, pout = 300 W, IDQ = 500 mA, f = 175 MHz, VSWR 5:1 at all Phase A...
Description N-CHANNEL BROADBAND RF POWER MOSFET

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    MRF141

MOTOROLA[Motorola, Inc]
Part No. MRF141
OCR Text ...f = 30; 30.001 MHz (VDD = 28 V, pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz Drain Efficiency (VDD = 28 V, pout = 150 W (PEP), f = 30; 30.001 MHz, IDQ = 250 mA, ID (Max) = 5.95 A) Intermodulation Distortion (1) (VDD = 28 V, pout = 150 W (P...
Description N-CHANNEL BROADBAND RF POWER MOSFET

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    MRF148

MOTOROLA[Motorola, Inc]
Part No. MRF148
OCR Text ...plifier Power Gain (VDD = 50 V, pout = 30 W (PEP), IDQ = 100 mA) Drain Efficiency (VDD = 50 V, f = 30 MHz, IDQ = 100 mA) Intermodulation Distortion (VDD = 50 V, pout = 30 W (PEP), f = 30; 30.001 MHz, IDQ = 100 mA) Load Mismatch (VDD = 50 V,...
Description N-CHANNEL MOS LINEAR RF POWER FET

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    MRF1500

MOTOROLA[Motorola, Inc]
Part No. MRF1500
OCR Text ...ifier Power Gain (VCC = 50 Vdc, pout = 500 W Peak, f = 1090 MHz) Collector Efficiency (VCC = 50 Vdc, pout = 500 W Peak, f = 1090 MHz) Load Mismatch (VCC = 50 Vdc, pout = 500 W Peak, f = 1090 MHz, Load VSWR = 10:1 All Phase Angles) GPB 5.2...
Description MICROWAVE POWER TRANSISTOR

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    MRF15030

Motorola, Inc
Part No. MRF15030
OCR Text ...ifier Power Gain (VCC = 26 Vdc, pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Collector Efficiency (VCC = 26 Vdc, pout = 30 W (PEP), ICQ = 125 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Intermodulation Distortion (VCC = 26 Vdc, ...
Description RF POWER TRANSISTOR

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