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For oxide Found Datasheets File :: 6673 Search Time::1.688ms
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				SST[Silicon Storage Technology, Inc]
Part No.	SST39VF016 SST39VF016-55-4C-B3I SST39VF016-55-4C-B3K SST39VF016-55-4C-EI SST39VF016-55-4C-EK SST39VF016-55-4I-B3I SST39VF016-55-4I-B3K SST39VF016-55-4I-EI SST39VF016-55-4I-EK SST39VF016-70-4C-B3I SST39VF016-70-4C-B3K SST39VF016-70-4C-EI SST39VF016-70-4C-EK SST39VF016-70-4I-B3I SST39VF016-70-4I-B3K SST39VF016-70-4I-EI SST39VF016-70-4I-EK SST39VF016-90-4C-B3I SST39VF016-90-4C-B3K SST39VF016-90-4C-EI SST39VF016-90-4C-EK SST39VF016-90-4I-B3I SST39VF016-90-4I-B3K SST39VF016-90-4I-EI SST39VF016-90-4I-EK SST39LF080 SST39LF080-55-4C-B3I SST39LF080-55-4C-B3K SST39LF080-55-4C-EI SST39LF080-55-4C-EK SST39LF080-55-4I-B3I SST39LF080-55-4I-B3K SST39LF080-55-4I-EI SST39LF080-55-4I-EK SST39LF080-70-4C-B3I SST39LF080-70-4C-B3K SST39LF080-70-4C-EI SST39LF080-70-4C-EK SST39LF080-70-4I-B3I SST39LF080-70-4I-B3K SST39LF080-70-4I-EI SST39LF080-70-4I-EK SST39LF080-90-4C-B3I SST39LF080-90-4C-B3K SST39LF080-90-4C-EI SST39LF080-90-4C-EK SST39LF080-90-4I-B3I SST39LF080-90-4I-B3K SST39LF080-90-4I-EI SST39LF080-90-4I-EK SST39VF080 SST39VF080-55-4C-B3I SST39VF080-55-4C-B3K SST39VF080-55-4C-EI SST39VF080-55-4C-EK SST39VF080-55-4I-B3I SST39VF080-55-4I-B3K SST39VF080-55-4I-EI SST39VF080-55-4I-EK SST39VF080-70-4C-B3
OCR Text	...plit-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080/016 write ...
Description	8 Mbit (x8) multi-purpose flash 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash 8 Mbit / 16 Mbit ( x8 ) Multi-purpose Flash
File Size	294.87K / 26 Page	View it Online	Download Datasheet

				GE[General Semiconductor]
Part No.	AS3024 AS3028
OCR Text	...erature stability due to unique oxide passivation Patented Passivated Anisotropic Rectifier (PAR) construction Integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation Low leakage current at TJ=175C ...
Description	AVALANCHE ALTERNATOR RECTIFIER PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY
File Size	92.11K / 1 Page	View it Online	Download Datasheet

				GE Security, Inc. GE[General Semiconductor]
Part No.	AS3524 AS3528 AS3524ANDAS3528
OCR Text	...erature stability due to unique oxide passivation Patented Passivated Anisotropic Rectifier (PAR) construction Integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation Low leakage current at TJ=175C ...
Description	AVALANCHE ALTERNATOR RECTIFIER PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY
File Size	114.36K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7608-55
OCR Text	...) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". April 1998 7 Rev 1.000 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET DEFINITIONS Data sheet status Objective...
Description	TrenchMOS transistor Standard level FET
File Size	65.96K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BUK9608-55
OCR Text	...) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". April 1998 7 Rev 1.000 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET DEFINITIONS Data sheet status Objective sp...
Description	TrenchMOS transistor Logic level FET
File Size	68.11K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF640A
OCR Text	oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.) 1 2 3 IRF640A BVDSS = 200 V RDS(on) = 0.18 ID = 18 A TO-220 1...
Description	Advanced Power MOSFET
File Size	259.33K / 7 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF140
OCR Text	...etween the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-t...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	162.25K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF141G
OCR Text	...d from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the g...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	141.68K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF148
OCR Text	...etween the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-t...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	145.04K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF150
OCR Text	...etween the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-t...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	146.86K / 6 Page	View it Online	Download Datasheet

For oxide Found Datasheets File :: 6673 Search Time::1.688ms
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Price and Availability

Price & Availability of oxide

Part #	Manufacturer	Description	Price	BuyNow Qty.
86621258 (ALTERNATE: ALU-OXIDE) 72638242	Murrplastik Systemtechnik GmbH	Oxidizing Solution, 30ml, For Anodized Aluminium Labels, Alu-oxide \| Murrplastik 86621258	1: USD53.27 5: USD50.6 10: USD49.54 25: USD48.47 50: USD47.41	2

Part #	Manufacturer	Description	Price	BuyNow Qty.
GS 3-9 BLACK OXIDE	Stimpson Company			611
HS3 M6 BLACK OXIDE	Buckeye Fasteners			1842

Part #	Manufacturer	Description	Price	BuyNow Qty.
9260 BLACK OXIDE FINISH	BUD Industries Inc	Screws Machine Steel Truss Head Phillips Drive 12-24	500: USD0.353 250: USD0.491 100: USD0.812 50: USD1.2	806
ST-BE W/METAL OXIDE VARIST	Phoenix Contact	ST-BE W/Metal Oxide Varistor	500: USD15.83 250: USD16.07 100: USD16.51 50: USD16.98 25: USD17.74 10: USD18.85 1: USD20.11	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
V23130C2021A412-EV-CBOX 1-1414939-4	TE Connectivity	Automotive Relays V23130C2021A412-EV-CBOX	1: USD47.52 5: USD46.59 10: USD45.68 24: USD44.78 48: USD40.51 120: USD39.72	1239
T9AS1D12-24 1-1393210-8	TE Connectivity	General Purpose Relays T9AS1D12-24	2: USD2.86 10: USD2.73 25: USD2.67 50: USD2.62 100: USD2.57 250: USD2.52	8959
MS24523-30 1TL1-6	Honeywell Sensing and Control	Toggle Switches SPST (ON)-OFF Screw Term	1: USD30.79 5: USD30.19 10: USD29.6 25: USD29.02 50: USD28.45 100: USD27.89 250: USD25.49	691
T9AS1D12-12 1-1393210-3	TE Connectivity	General Purpose Relays T9AS1D12-12	2: USD3.24 10: USD3.09 25: USD3.03 50: USD2.97	19583
MS24659-21A 2TL1-1A	Honeywell Sensing and Control	Toggle Switches DPDT ON-OFF-ON Screw Term	1: USD74.94 10: USD67.48 50: USD66.16 100: USD60.58 250: USD57.26 500: USD56.13	299

Part #	Manufacturer	Description	Price	BuyNow Qty.
9260 BLACK OXIDE FINISH	BUD Industries Inc	Screws Machine Steel Truss Head Phillips Drive 12-24	500: USD0.353 250: USD0.491 100: USD0.812 50: USD1.2	806
ST-BE W/METAL OXIDE VARIST	Phoenix Contact	ST-BE W/Metal Oxide Varistor	500: USD15.83 250: USD16.07 100: USD16.51 50: USD16.98 25: USD17.74 10: USD18.85 1: USD20.11	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
RSF2B-20 20 OHM 2W METAL OXIDE RESISTOR 5% TOL	MFG UPON REQUEST			8
#8 RED OXIDE VARGLAS	MFG UPON REQUEST			49459
TIP126(ROHS) OXIDED D/C09	STMicroelectronics			302
BD135(ROHS,OXIDED) D/C09	STMicroelectronics			1310
TOP224YN(OXIDED)	MFG UPON REQUEST			1083

Part #	Manufacturer	Description	Price	BuyNow Qty.
RES METAL OXIDE 4.7K,1W,5%	N/A	RES METAL OXIDE 4.7K,1W,5%		0