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IXYS, Corp.
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Part No. |
IXTH96N20P IXTT96N20P
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Description |
n-channel Engancement Mode 96 A, 200 V, 0.024 ohm, n-channel, Si, POWER, mosfet, TO-247AD n-channel Engancement Mode 96 A, 200 V, 0.024 ohm, n-channel, Si, POWER, mosfet, TO-268AA
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File Size |
598.96K /
5 Page |
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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Part No. |
APT20M11JVR
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Description |
Power mosfet; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, n-channel, Si, POWER, mosfet Power MOS V is a new generation of high voltage n-channel enhancement mode power mosfets. POWER MOS V 200V 175A 0.011 Ohm
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File Size |
74.41K /
4 Page |
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it Online |
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![AP18N20GI AP18N20GI-14](Maker_logo/advanced_power_electronics_corp.GIF)
Advanced Power Electronics, Corp. Advanced Power Electronics Corp. Advanced Power Electronics ...
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Part No. |
AP18N20GI AP18N20GI-14
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Description |
18 A, 200 V, 0.17 ohm, n-channel, Si, POWER, mosfet, TO-220AB ROHS COMPLIANT, TO-220CFM, 3 PIN n-channel ENHANCEMENT MODE POWER mosfet Simple Drive Requirement
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File Size |
152.50K /
5 Page |
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it Online |
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Microsemi, Corp.
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Part No. |
PPF360M
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Description |
N Channel mosfet; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, n-channel, Si, POWER, mosfet, TO-254AA
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File Size |
133.29K /
2 Page |
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![IRFY230C IRFY230C-JQR-BR1](Maker_logo/seme_lab.GIF)
TT electronics Semelab, Ltd. Seme LAB
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Part No. |
IRFY230C IRFY230C-JQR-BR1
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Description |
9 A, 200 V, 0.4 ohm, n-channel, Si, POWER, mosfet, TO-257AB HERMETIC SEALED, METAL, TO-220M, 3 PIN n-channel mosfet in a Hermetically sealed
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File Size |
10.59K /
1 Page |
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it Online |
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Price and Availability
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