...ollector output capacitance
*h
FE1
Rank classification
Rank hFE1 Q 90 ~ 155 2SB789 2SB789A DQ EQ R 130 ~ 220 DR ER
Marking Symb...v)
Base current IB (mA)
vCE(sat) -- IC
Collector to emitter saturation voltage vCE(sat) (v)
...
...put capacitance Noise voltage
*h
FE
Rank classification
Rank hFE R 130 ~ 220 2SB792 2SB792A IR 2FR S 185 ~ 330 IS 2FS T 260 ~ 450 IT --
Marking Symbol
0 to 0.1
v
0.1 to 0.3 0.40.2
0.8
Ratings
Unit
0.16 -0.06
...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320
Maximum Collector Dissipation Curve...v, -0.24 A) -0.2 -0.1 -0.05 -1 2SB857 2SB858 -2 -5 -10 -20 -50 -100 Collector to emitter voltage vCE...
... voltage Transition frequency
*h FE1
v v Mhz
Rank classification
Q 60 to 140 P 100 to 240
Rank hFE1
Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification.
14.70.5
emitter vol...
Description
Silicon PNP epitaxial planar type(For power amplification)
...n time Storage time Fall time
*h FE1
250
-1.8 -1.2
v v Mhz s s s
Rank classification
Q 70 to 150 P 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
Rank hFE1
...
Description
Silicon PNP epitaxial planar type(For power amplification)
...n time Storage time Fall time
*h FE1
250
-2 -1.5
v v Mhz s s s
Rank classification
Q 70 to 150 P 120 to 250
Rank hFE1
1
Power Transistors
PC -- Ta
50 -6 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without he...
Description
Silicon PNP epitaxial planar type(For power amplification)
...n time Storage time Fall time
*h
(TC=25C)
Symbol ICBO IEBO vCEO hFE1 hFE2* vCE(sat) vBE(sat) fT ton tstg tf Conditions vCB = -100v, IE ...v v Mhz s s s min typ max -10 -50 Unit A A v
FE2
Rank classification
Q 90 to 180 P 130 to 260...
Description
Silicon PNP epitaxial planar type(For power switching)
...n time Storage time Fall time
*h
(TC=25C)
Symbol ICBO IEBO vCEO hFE1 hFE2* vCE(sat) vBE(sat) fT ton tstg tf IC = -1A, IB1 = - 0.1A, IB2...v v Mhz s s s min typ max -10 -50 Unit A A v
FE2
Rank classification
Q 90 to 180 P 130 to 260...
Description
Silicon PNP epitaxial planar type(For power switching)