...e Drain-source on-state voltage forward transfer admittance Input capacitance Output capacitance reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ...
Description
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
...e Drain-source on-state voltage forward transfer admittance Input capacitance Output capacitance reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ...
...e Drain-source on-state voltage forward transfer admittance Input capacitance Output capacitance reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ...
Description
Fairchild Power Switch(FPS) Nch POWER MOSFET HIGH-SPEED SWITCHING USE
...e Drain-source on-state voltage forward transfer admittance Input capacitance Output capacitance reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 150V, ...
...
reverse Voltage 200 to 800V forward Current 1.5A
Features
0.421 (10.7) 0.411 (10.4)
0.080 (2.03) 0.060 (1.50)
0.095 (2.41) 0.0...reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified ou...
...k Switching Current Peak Diode forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power...reverse Transfer Capacitance Diode reverse Recovery Time Diode Peak reverseCurrent Diode Recovery Ch...
Description
HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
...k Switching Current Peak Diode forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power...reverse Transfer Capacitance Diode reverse Recovery Time Diode Peak reverseCurrent Diode Recovery Ch...
Description
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
...k Switching Current Peak Diode forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power...reverse Transfer Capacitance Diode reverse Recovery Time Diode Peak reverseCurrent Diode Recovery Ch...
Description
HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
...k Switching Current Peak Diode forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power...reverse Transfer Capacitance Diode reverse Recovery Time Diode Peak reverseCurrent Diode Recovery Ch...
Description
Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
...d 3) INPUT (EMITTER) Continuous forward Current reverse Voltage Power Dissipation (1) OUTPUT (SENSOR) Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation (TC = 25C)(1) (TA = 25C unless otherwise spe...