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For doubled Found Datasheets File :: 1709 Search Time::1.687ms
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				ON Semiconductor
Part No.	MMBD1010LT1-D
OCR Text	...power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. another alternative would be to use a ceramic substrate or an aluminum c...
Description	Switching Diode
File Size	117.51K / 8 Page	View it Online	Download Datasheet

				Motorola Inc MOTOROLA[Motorola, Inc]
Part No.	BCP68T1
OCR Text	...power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. A graph of RJA versus collector pad area is shown in Figure 8. 160 R JA...
Description	MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
File Size	149.51K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	ST3232ECTR ST3232EB ST3232EBDR ST3232EBPR ST3232EBTR ST3232EB08 ST3232ECDR ST3232ECPR
OCR Text	...irst charge pump capacitor 2 v+ doubled voltage terminal 3c 1 - negative terminal for the first charge pump capacitor 4c 2 + positive terminal for the second charge pump capacitor 5c 2 - negative terminal for the second charge pump capacit...
Description	± 15 kV ESD protection 3 to 5.5 V low power, up to 250 kbps, RS-232 drivers and receivers
File Size	780.71K / 19 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	PZTA42T1/D PZTA42T1-D
OCR Text	...power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. a graph of r q ja versus collector pad area is shown in figure 5. 0.8 ...
Description	High Voltage Transistor Surface Mount High Voltage Transistor NPN
File Size	72.01K / 8 Page	View it Online	Download Datasheet

				Shanghai Sunrise Electronics
Part No.	1N6267
OCR Text	...lts and less, the i d limit is doubled. 4. electrical characteristics apply in both directions. htt p ://www.sse-diode.com v f 3.5/5.0 v ratings 1.5ke6.8 thru 1.5ke440ca transient voltage suppressor breakdown voltage:6.8-440v p...
Description	TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W
File Size	29.72K / 3 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	UAA2068AHL
OCR Text	...SWITCH The RF switch passes the doubled VCO signal to either the TX preamplifier (when T_EN is HIGH) or to the RX LO buffer (when T_EN is LOW). In TX mode, the difference in the RF power levels, observed at the TX output when T_EN is switch...
Description	Transmit chain and synthesizer with integrated VCO for DECT
File Size	121.82K / 20 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	UAA2068 UAA2068G
OCR Text	...SWITCH The RF switch passes the doubled VCO signal to either the TX preamplifier (when T_EN is HIGH) or to the RX LO buffer (when T_EN is LOW). In TX mode, the difference in the RF power levels, observed at the TX output when T_EN is switch...
Description	Transmit chain and synthesizer with integrated VCO for DECT
File Size	131.28K / 20 Page	View it Online	Download Datasheet

For doubled Found Datasheets File :: 1709 Search Time::1.687ms
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