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For charge-transfer Found Datasheets File :: 52527    Search Time::2.266ms    
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    Advanced Power Electron...
Part No. AP6928GMT-HF
OCR Text ...=0v - - + 100 na q g total gate charge i d =12a - 6.5 10.4 nc q gs gate-source charge v ds =15v - 1.5 - nc q gd gate-drain ("miller") charge...transfer capacitance f=1.0mhz - 100 - pf r g gate resistance f=1.0mhz - 2.7 5.4 source-drain diode ...
Description Simple Drive Requirement, Easy for Synchronous Buck Converter Application

File Size 127.52K  /  7 Page

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    TOSHIBA
Part No. 2SK3472
OCR Text ... 70 ns total gate charge (gate-source plus gate-drain) q g 5 gate-source charge q gs 3 gate-drain (?mille...transfer admittance y fs (s) drain-source voltage v ds (v) drain-source voltag...
Description Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications

File Size 221.40K  /  6 Page

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    AN2970

STMicroelectronics
Part No. AN2970
OCR Text charge transfer capacitive sensing technology introduction this application note describes the proxsense? (a) charge transfer capacitive sensing technology used in stmicroelectr onics stm8t14x capacitive sensors. stm8t14x devices offer a ...
Description This application note describes the ProxSense

File Size 352.29K  /  11 Page

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    AN2966

STMicroelectronics
Part No. AN2966
OCR Text ...ntrollers stm8t141 www.st.com charge transfer acquisition principle overview an2966 2/8 docid015600 rev 3 1 charge transfer acquisi tion principle overview the stm8t141 capacitive sensor uses the c harge transfer acquisition principle to...
Description Capacitor selection guide for STM8T141 capacitive sensor

File Size 154.27K  /  8 Page

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    RQK0302GGDQS-15

Renesas Electronics Corporation
Part No. RQK0302GGDQS-15
OCR Text ...0 ? , rg = 4.7 ? total gate charge qg ? 3.2 ? nc gate to source charge qgs ? 0.6 ? nc gate to drain charge qgd ? 1.2 ? ...transfer characteristics (1) gate to source voltage v gs (v) drain current i d (a) typical ...
Description Silicon N Channel MOS FET Power Switching

File Size 95.46K  /  9 Page

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    RQK0302GGDQA-11 RQK0302GGDQATL-H

Renesas Electronics Corporation
Part No. RQK0302GGDQA-11 RQK0302GGDQATL-H
OCR Text ...0 ? , rg = 4.7 ? total gate charge qg ? 3.3 ? nc gate to source charge qgs ? 0.6 ? nc gate to drain charge qgd ? 0.5 ? ...transfer characteristics (1) gate to source voltage v gs (v) drain current i d (a) typical ...
Description Silicon N Channel MOS FET Power Switching

File Size 78.06K  /  7 Page

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    RQK0302GGDQA-15

Renesas Electronics Corporation
Part No. RQK0302GGDQA-15
OCR Text ... t f ? 8.2 ? ns total gate charge qg ? 3.3 ? nc v dd = 10 v, v gs = 10 v, i d = 2.7a gate to source charge qgs ? 0.6 ? ...transfer characteristics (1) gate to source voltage v gs (v) drain current i d (a) typical ...
Description Silicon N Channel MOS FET Power Switching

File Size 166.74K  /  8 Page

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    RJK03N5DPA

Renesas Electronics Corporation
Part No. RJK03N5DPA
OCR Text ...g ? 1.5 3.0 ? total gate charge qg ? 23 ? nc gate to source charge qgs ? 7.9 ? nc gate to drain charge qgd ? 7.5 ? nc...transfer characteristics v ds = 5 v pulse test v gs = 2.4 v tc = 75c 25c ?25c gate to source voltag...
Description 30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching

File Size 179.79K  /  7 Page

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