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  900 1800 1900 Datasheet PDF File

For 900 1800 1900 Found Datasheets File :: 1632    Search Time::1.359ms    
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    SGM2016AM SGM2016AP SGM2016AM/AP

SONY[Sony Corporation]
Part No. SGM2016AM SGM2016AP SGM2016AM/AP
OCR Text ...100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 S11 MAG 0.999 0.994 0.981 0.969 0.952 0.935 0.917 0.896 0.877 0.850 0.822 0.797 0.769 0.744 0.717 0.692 0.668 0.641 0.617 0.589 ANG -3.8 -7.9 -11.8 -...
Description GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET

File Size 60.04K  /  5 Page

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    SGM2016AN SGM2016

SONY[Sony Corporation]
Part No. SGM2016AN SGM2016
OCR Text ...100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 S11 MAG 0.999 0.994 0.981 0.969 0.952 0.935 0.917 0.896 0.877 0.850 0.822 0.797 0.769 0.744 0.717 0.692 0.668 0.641 0.617 0.589 ANG -3.8 -7.9 -11.8 -...
Description    GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET

File Size 54.68K  /  5 Page

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    UPA807 UPA807T UPA807T-T1

NEC[NEC]
Part No. UPA807 UPA807T UPA807T-T1
OCR Text ...0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 MAG 0.982 0.983 0.973 0.955 0.946 0.918 0.900 0.873 0.845 0.827 0.799 0.776 0.753 0.718 0...
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

File Size 55.47K  /  8 Page

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    UPA808 UPA808T UPA808T-T1

NEC[NEC]
Part No. UPA808 UPA808T UPA808T-T1
OCR Text ...0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 MAG 0.974 0.971 0.956 0.926 0.902 0.861 0.829 0.793 0.753 0.723 0.691 0.652 0.628 0.587 0...
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

File Size 63.81K  /  12 Page

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    NE6510179 NE6510179A NE6510179A-T1

NEC[NEC]
Part No. NE6510179 NE6510179A NE6510179A-T1
OCR Text ...DS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm Pout...1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 MAG. 0.940 0.938 0.943 0.940 0.939 0.948 0.949 0.9...
Description 1 W L-BAND POWER GaAs HJ-FET

File Size 75.45K  /  8 Page

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    PTF10021

Ericsson Microelectronics
Part No. PTF10021
OCR Text ...g Parameters (VDS = 28 V, ID = 900 mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.938 0.949 0.988 0.993 0.993 0.991 0.990 0.993 0.998 0.999 1.000 0.996 0.8...
Description 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor

File Size 277.83K  /  6 Page

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    PTF10043

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10043
OCR Text ...100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.912 0.917 0.951 0.964 0.971 0.974 0.975 0.975 0.980 0.979 0.981 0.977 0.975 0.965 0.951 0.929 0.904 0.885 0.892 0.918 0.942 0...
Description 12 Watts/ 1.9-2.0 GHz GOLDMOS Field Effect Transistor
12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor
12 Watts, 1.9.0 GHz GOLDMOS Field Effect Transistor

File Size 234.06K  /  6 Page

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    PTF10053

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10053
OCR Text ...100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.806 0.800 0.850 0.878 0.900 0.914 0.925 0.932 0.941 0.947 0.957 0.961 0.963 0.963 0.963 0.964 0.968 0.972 0.976 0.978 0.976 0...
Description 12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

File Size 79.85K  /  6 Page

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    PTF10111

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10111
OCR Text ...100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.867 0.832 0.843 0.844 0.852 0.862 0.868 0.874 0.882 0.886 0.893 0.899 0.907 0.905 0.903 0.898 0.896 0.892 0.889 0.885 0.882 0...
Description 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor
6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

File Size 336.82K  /  6 Page

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    PTF10135

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTF10135
OCR Text ... (MHz) 100 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 S11 Mag 0.874 0.889 0.892 0.897 0.903 0.860 0.873 0.873 0.891 0.890 0.904 0.896 0.932 0.932 0.950 0.955 0.959 0.945 0.946 0.9...
Description 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

File Size 244.79K  /  6 Page

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