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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT9M100S APT9M100B
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| OCR Text |
...age
Rev A
2-2007
VDS = 800V
60
I
60
I
APT9M100B_S
DM
DM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
...4
1.0
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.2... |
| Description |
N-Channel MOSFET
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| File Size |
257.43K /
4 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100H45FT3G
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| OCR Text |
...S = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Min
Typ
VGS = 10V, ID = 9A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
4...4.47
Max 18 14 1.3 18 340 640
Unit A V V/ns ns
July, 2006 2-6 APTM100H45FT3G - Rev 1
C
... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
296.94K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM100H45FT3
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| OCR Text |
...S = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Min 1000
Typ
Max 100 500 450 5 100
Unit V A m V nA
VGS = 10V, ID = 9...4.47
Max 18 14 1.3 18 340 640
Unit A V V/ns
September, 2004 2-6 APTM100H45FT3 - Rev 0
ns C... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
317.05K /
6 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BUL98
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| OCR Text |
...t (IB =0) Test Conditions VCE = 800V VCE = 800V VCE = 450V L = 25mH 450 9 _ _ IB =1A _ _ IB =1.8A __ _ IB =2.4A _ _ IB =1A _ _ IB =1.8A __ _...4 Tj = 125C Min. Typ. Max. 100 500 100 Unit A A A V V V V V V V V
Collector-emitter VCEO(sus)(1) ... |
| Description |
High voltage fast-switching NPN power transistor
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| File Size |
195.55K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA10N80_F109 FQA10N80 FQA10N80_06 FQA10N8006
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| OCR Text |
800V N-Channel MOSFET
September 2006
QFET
FQA10N80
800V N-Channel MOSFET
Features
* * * * * * 9.8A, 800V, RDS(on) = 1.05 @VGS = 10...4.0 240 1.92 -55 to +150 300
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal R... |
| Description |
800V N-Channel MOSFET
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| File Size |
791.02K /
9 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF8N80
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| OCR Text |
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...4.0 107 0.85 -55 to +150 300
- Derate above 25C Operating and Storage Temperature Range Maximum l... |
| Description |
800V N-Channel MOSFET
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| File Size |
687.73K /
8 Page |
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it Online |
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http://
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI4N80 FQB4N80
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| OCR Text |
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...4.0 3.13 130 1.04 -55 to +150 300
TJ, TSTG TL
- Derate above 25C Operating and Storage Tempera... |
| Description |
800V N-Channel MOSFET
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| File Size |
658.51K /
9 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFH9N80 IXFH8N80
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| OCR Text |
800V IXFH9N80 800V
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IA...4.5 V %/K V %/K nA A mA
International standard packages Low RDS (on) HDMOSTM process Rugged pol... |
| Description |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
202.38K /
4 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2384
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| OCR Text |
.... . . . . . . . . . . . . . . . 800V Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...4.0 1.5 V A mA nA V Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'... |
| Description |
MOSFET N-Channel Enhancement Mode, High Speed Switch
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| File Size |
23.94K /
2 Page |
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it Online |
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Price and Availability
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