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    W29EE512 W29EE512P-12 W29EE512P-12B W29EE512P-70 W29EE512P-70B W29EE512P-90 W29EE512P-90B W29EE512T-12 W29EE512T-12B W29

Winbond
Part No. W29EE512 W29EE512P-12 W29EE512P-12B W29EE512P-70 W29EE512P-70B W29EE512P-90 W29EE512P-90B W29EE512T-12 W29EE512T-12B W29EE512T-70 W29EE512T-70B W29EE512T-90 W29EE512T-90B
OCR Text 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE512 is a 512k bit, 5-volt only CMOS flash memory organized as 64K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required....
Description 64K X 8 CMOS FLASH MEMORY

File Size 151.12K  /  20 Page

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    W39L040 W39L040P-70 W39L040P-70B W39L040P-70J W39L040P-70K W39L040P-90 W39L040P-90B W39L040P-90J W39L040P-90K W39L040Q-7

Winbond Electronics
WINBOND[Winbond]
Part No. W39L040 W39L040P-70 W39L040P-70B W39L040P-70J W39L040P-70K W39L040P-90 W39L040P-90B W39L040P-90J W39L040P-90K W39L040Q-70 W39L040Q-70B W39L040Q-70J W39L040Q-70K W39L040Q-90 W39L040Q-90B W39L040Q-90J W39L040Q-90K W39L040T-70 W39L040T-70B W39L040T-70J W39L040T-70K W39L040T-90 W39L040T-90B W39L040T-90J W39L040T-90K
OCR Text 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512k x 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are co...
Description 512 K X 8 CMOS FLASH MEMORY

File Size 327.83K  /  27 Page

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    W986432AH W986432AHA1

Winbond Electronics
WINBOND[Winbond]
Part No. W986432AH W986432AHA1
OCR Text ... speed grades: -55, -6, -7 and -8. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column a...
Description 512k x 4 BANKS x 32 BITS SDRAM
512k x 4 BANKS x 32 BITS SDRAM
From old datasheet system

File Size 1,343.55K  /  44 Page

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    W986432DH

Winbond
Part No. W986432DH
OCR Text ... speed grades: -5, -55, -6, -7,-8. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a bu...512k x 4 BANKS x 32 BITS SDRAM PIN CONFIGURATION DQM1 DQM3 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ31 DQ30...
Description 512k ? 4 BANKS ? 32 BITS SDRAM
512k 4 BANKS 32 BITS SDRAM

File Size 78.80K  /  11 Page

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    AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12RI AT49BV4096A-12TC AT49BV4096A-12TI AT49BV4096AT AT49BV4096AT-12RC AT49BV409

Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
Part No. AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12RI AT49BV4096A-12TC AT49BV4096A-12TI AT49BV4096AT AT49BV4096AT-12RC AT49BV4096AT-12RI AT49BV4096AT-12TC AT49BV4096AT-12TI AT49BV004 AT49BV004-12TC AT49BV004-12TI AT49BV004T AT49BV004T-12TC AT49BV004T-12TI
OCR Text ...s organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, t...512k x 8/ 256K x 16) CMOS Flash Memory AT49BV004 AT49BV004T AT49BV4096A AT49BV4096AT Preliminary ...
Description LM4250 Programmable Operational Amplifier; Package: SOIC NARROW; No of Pins: 8 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40
LM4308 Mobile Pixel Link Two (MPL-2) - 18-bit CPU Display Interface Master/Slave; Package: MICRO-ARRAY; No of Pins: 49 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40
4-Megabit 512k x 8/ 256K x 16 CMOS Flash Memory 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48

File Size 241.12K  /  15 Page

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    BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI

BSI[Brilliance Semiconductor]
Part No. BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI
OCR Text 8 bit switchable DESCRIPTION BS616LV4020 * Very low operation voltage : 2.7 ~ 3.6V * Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby cur...
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable

File Size 215.30K  /  12 Page

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    BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI

BSI[Brilliance Semiconductor]
Part No. BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
OCR Text 8 bit switchable DESCRIPTION BS616LV4021 * Very low operation voltage : 2.4 ~ 5.5V * Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby cu...
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable

File Size 222.10K  /  11 Page

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    BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI

BSI[Brilliance Semiconductor]
Part No. BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI
OCR Text 8 bit switchable DESCRIPTION BS616LV4023 * Very low operation voltage : 2.4 ~ 3.6V * Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby cu...
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable

File Size 217.16K  /  11 Page

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    BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI

BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Part No. BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI
OCR Text 8 bit switchable DESCRIPTION BS616LV4025 * Operation voltage : 4.5~5.5V * Low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade : 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current * High spee...
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable 非常低功电压CMOS SRAM56K × 1612K × 8位开
LM5009 150 mA, 100V Step-Down Switching Regulator; Package: MINI SOIC; No of Pins: 8

File Size 187.58K  /  11 Page

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    BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI

BSI[Brilliance Semiconductor]
Part No. BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
OCR Text 8 bit switchable DESCRIPTION BS616UV4020 * Ultra low operation voltage : 1.8 ~ 3.6V * Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating current 0.2uA (Typ.) CMOS standby c...
Description Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable

File Size 209.23K  /  11 Page

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